- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296202 > HYM75V32M636T6-H (HYNIX SEMICONDUCTOR INC) 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 PDF資料下載
參數(shù)資料
| 型號： | HYM75V32M636T6-H |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | DRAM |
| 英文描述： | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA144 |
| 封裝： | SODIMM-144 |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 179K |
| 代理商： | HYM75V32M636T6-H |
PC133 SDRAM SO DIMM
Rev. 0.1/Apr. 02
9
HYM75V32M636(L)T6 Series
DC CHARACTERISTICS I (TA=0 to 70°C, VDD=3.3±0.3V)
Note :
1.VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2.DOUT is disabled, VOUT=0 to 3.6
DC CHARACTERISTICS II
Note :
1. IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HYM75V32M636T6 -K/H
4.HYM75V32M636LT6-K/H
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
ILI
-4
4
uA
1
Output Leakage Current
ILO
-1
1
uA
2
Output High Voltage
VOH
2.4
-
V
IOH = -4mA
Output Low Voltage
VOL
-0.4
V
IOL = +4mA
Parameter
Symbol
Test Condition
Speed
Unit
Note
-K
-H
Operating Current
IDD1
Burst length=1, One bank active
tRC
≥ tRC(min), IOL=0mA
440
mA
1
Precharge Standby Current
in Power Down Mode
IDD2P
CKE
≤ VIL(max), tCK = min
16
mA
IDD2PS
CKE
≤ VIL(max), tCK =
∞
16
Precharge Standby Current
in Non Power Down Mode
IDD2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = min
Input signals are changed one time during
2clks. All other pins
≥ VDD-0.2V or ≤ 0.2V
160
mA
IDD2NS
CKE
≥ VIH(min), tCK =
∞
Input signals are stable.
80
Active Standby Current
in Power Down Mode
IDD3P
CKE
≤ VIL(max), tCK = min
56
mA
IDD3PS
CKE
≤ VIL(max), tCK =
∞
56
Active Standby Current
in Non Power Down Mode
IDD3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCK = min
Input signals are changed one time during
2clks. All other pins
≥ VDD-0.2V or ≤ 0.2V
320
mA
IDD3NS
CKE
≥ VIH(min), tCK =
∞
Input signals are stable.
320
Burst Mode Operating
Current
IDD4
tCK
≥ tCK(min), IOL=0mA
All banks active
CL=3
800
mA
1
CL=2
720
Auto Refresh Current
IDD5
tRRC
≥ tRRC(min), All banks active
1760
mA
2
Self Refresh Current
IDD6
CKE
≤ 0.2V
24
mA
3
12
mA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYS64V16300GU-8-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS64V16300GU-7-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS64V16300GU-7.5-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS64V32220GU-7-C2 | 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 |
| HYS72V2100GU-10 | 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM76V16635HGT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x16|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM76V16635HGT8-H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYM76V16635HGT8-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYM76V16655HGT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|P/S|x16|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM76V16655HGT8-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。