參數(shù)資料
型號(hào): HYR 186420G
廠商: SIEMENS AG
英文描述: 144MB Rambus RIMM Modules(144M位 Rambus RIMM 模塊)
中文描述: 144兆R(shí)ambus公司RIMM的模塊(144M位Rambus的RIMM的模塊)
文件頁數(shù): 12/14頁
文件大?。?/td> 323K
代理商: HYR 186420G
HYR 16xx30G/HYR 18xx20G
Rambus RIMM Modules
Data Book
12
2.00
a) Actual power will depend on individual memory controller and usage pattern. Power does not include Refresh
Current.
b) I/O power is a function of % 1’s to add I/O power for 50% 1’s for a x 16 need to add 257mA or 290mA for x18
ECC module for the following: V
DD
= 2.5V, V
TERM
= 1.8V, V
REF
= 1.4V and V
DIL
= V
REF
= 0.5V.
RIMM Module Current Profile
I
DD
RIMM Module Capacity:
No. of 128/144 Mbit RDRAMs:
6
4
1
8
2
1
Unit
RIMM Modules Power
Conditions
a)
Freq.
max.
max.
max.
I
DD1
One RDRAM in Read
b
,
balance in NAP mode
-800
530/585
545/600
580/635
mA
-711
480/530
495/545
530/580
mA
-600
420/460
435/475
470/510
mA
I
DD2
One RDRAM in Read
b
,
balance in Standby mode
-800
820/875
1220/1275 2020/2075 mA
-711
755/805
1135/1185 1895/1945 mA
-600
-800
680/720
970/1025
1040/1080 1760/1800 mA
1570/1625 2770/2825 mA
I
DD3
One RDRAM in Read
b
,
balance in Active mode
-711
905/955
1485/1535 2645/2695 mA
-600
830/870
1390/1430 2510/2550 mA
I
DD4
One RDRAM in Write,
balance in Active mode
-800
585/645
600/660
635/695
mA
-711
525/580
540/595
575/630
mA
-600
460/505
475/520
510/555
mA
I
DD5
One RDRAM in Write,
balance in Standby mode
-800
875/935
1275/1335 2075/2135 mA
-711
800/855
1180/1235 1940/1995 mA
-600
720/765
1080/1125 1800/1845 mA
I
DD6
One RDRAM in Write,
balance in Active mode
-800
1025/1085 1625/1685 2825/2885 mA
-711
950/1005
1530/1585 2690/2745 mA
-600
870/915
1430/1475 2550/2595 mA
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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