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參數(shù)資料
| 型號： | HYR 186420G |
| 廠商： | SIEMENS AG |
| 英文描述： | 144MB Rambus RIMM Modules(144M位 Rambus RIMM 模塊) |
| 中文描述： | 144兆Rambus公司RIMM的模塊（144M位Rambus的RIMM的模塊） |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 323K |
| 代理商： | HYR 186420G |
HYR 16xx30G/HYR 18xx20G
Rambus RIMM Modules
Data Book
9
2.00
1)
The table below shows the number of 128 Mbit RDRAM devices contained in a RIMM module of
listed memory storage capacity
.
Absolute Maximum Ratings
Symbol Parameter
Limit Values
Unit
min.
max.
V
DD
+ 0.3
V
I,ABS
Voltage applied to any RSL or CMOS signal pad with
respect to GND
Voltage on
V
DD
with respect to GND
Storage temperature
– 0.3
V
V
DD,ABS
T
STORE
– 0.5
V
DD
+ 1.0
100
V
°
C
– 50
DC Recommended Electrical Conditions
Symbol
Parameter and Conditions
Limit Values
Unit
min.
max.
V
DD
V
CMOS
Supply voltage
2.50 – 0.13
2.50 + 0.13
V
CMOS I/O power supply at pad for
2.5 V controllers:
CMOS I/O power supply at pad for
1.8 V controllers:
2.5 – 0.13
1.8 – 0.1
2.5 + 0.25
1.8 + 0.2
V
V
V
REF
V
IL
V
IH
V
IL,CMOS
V
IH,CMOS
V
OL,CMOS
Reference voltage
1.4 – 0.2
V
REF
– 0.5
V
REF
+ 0.2
– 0.3
0.5
V
CMOS
+ 0.25
V
CMOS
+ 0.7
–
1.4 + 0.2
V
REF
– 0.2
V
REF
+ 0.5
0.5
V
CMOS
– 0.25
V
RSL input low voltage
V
RSL input high voltage
V
CMOS input low voltage
V
CMOS input high voltage
V
CMOS output low voltage @
I
OL,CMOS
= 1 mA
CMOS output high voltage @
I
OH,CMOS
= – 0.25 mA
V
REF
current @
V
REF,MAX
0.3
V
V
OH,CMOS
V
CMOS
– 0.3
–
V
I
REF
– 10
×
no.
RDRAMs
1)
– 10
×
no.
RDRAMs
1)
10
×
no.
RDRAMs
1)
10
×
no.
RDRAMs
1)
μ
A
I
SCK,CMD
CMOS input leakage current @
(0
≤
V
CMOS
≤
V
DD
)
CMOS input leakage current @
(0
≤
V
CMOS
≤
V
DD
)
μ
A
I
SIN,SOUT
– 10.0
10.0
μ
A
RIMM Module Capacity
64/72 MB
128/144 MB
256/288 MB
Number of 128/144 Mbit RDRAM devices 4
8
16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYR 1812820G | 288MB Rambus RIMM Modules(288M位 Rambus RIMM 模塊) |
| HYR 166430G | 128MB Rambus RIMM Modules(128M位 Rambus RIMM 模塊) |
| HYR 183220G | 72MB Rambus RIMM Modules(72M位 Rambus RIMM 模塊) |
| HYR163249G-653 | Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
| HYR166449G-653 | Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYR186420G-653 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR186420G-745 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR186420G-840 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR186420G-845 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs) |
| HYR186440G-653 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Direct RDRAM RIMM Modules (with 288 Mbit RDRAMs) |
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