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參數(shù)資料
| 型號： | HYS 64D64020GU |
| 廠商： | SIEMENS AG |
| 英文描述： | 2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184腳、寄存型512M位 DDR-I SDRAM 模塊) |
| 中文描述： | 2.5伏186針緩沖的DDR - 1 SDRAM的模塊（2.5伏，寄存型512M位的DDR 184腳，我內(nèi)存模塊） |
| 文件頁數(shù)： | 11/15頁 |
| 文件大?。?/td> | 164K |
| 代理商： | HYS 64D64020GU |
HYS64/72D32000GU / HYS64/72D64020GU
Unbuffered DDR-I SDRAM-Modules
Preliminary Datasheet
11
5.00
Precharge Standby
Current in Non-Power
Down Mode
I
CC2N
CKE
≥
V
IH(min)
,
t
CK
= min.,
CS =
V
IH (min)
CKE
≤
V
IL(max)
,
t
CK
= min.
CKE
≥
V
IH(min)
,
t
CK
= min.,
CS =
V
IH (min)
t
CK
= min.,
Read/Write command
cycling,
Multiple banks active,
gapless data, BL = 4
t
CK
= min.,
t
RC
=
t
RFC(min)
CBR command cycling
CKE
≤
0.2 V
50
45
40
mA
1), 3)
No Operating Current
(Active state: 4 bank)
I
CC3P
30
30
30
mA
1)
I
CC3N
65
60
55
mA
1), 3)
Operating Current
(Burst Mode)
I
CC4
140
120
100
mA
1), 2), 3)
Auto (CBR) Refresh
Current
I
CC5
155
135
110
mA
1), 4), 5)
Self Refresh Current
1)
These parameters depend on the cycle rate and are measured with the cycle determined by the minimum
value of
t
CK
and
t
RC
.
2)
The specified values are obtained with the output open.
3)
Input signals are changed once during three clock cycles.
4)
8192 refresh cycles in 64 ms.
5)
Minimum cycle time during Auto Refresh operation (
t
REF
) is greater than minimum cycle time for Read/Write
operation.
I
CC6
1
1
1
mA
1), 4)
Operating, Standby and Refresh Currents
(cont’d)
(for reference only)
(values apply to one SDRAM component and do not include register and PLL)
(
T
A
= 0 to +70
°
C,
V
DD
= 2.5 V ± 0.2 V)
Parameter
Symbol Test Condition
Speed
Unit Notes
– 7
– 7.5 – 8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYS 64D32000GU | 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184腳、寄存型256M位 DDR-I SDRAM 模塊) |
| HYS 72D32000GU | 2.5 V 185-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184腳、寄存型256M位 DDR-I SDRAM 模塊) |
| HYS 72D64020GU | 2.5 V 186-pin Unbuffered DDR-I SDRAM Modules(2.5 V 184腳、寄存型512M位 DDR-I SDRAM 模塊) |
| HYS 64V16220GDL | 3.3V SDRAM Modules(3.3V SDRAM 模塊) |
| HYS 64V16300GU | 3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-位 1列 同步動態(tài)RAM模塊) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS64D64020GU-7-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?512MB (64Mx64) PC2100 2-bank? |
| HYS64D64020GU-7-B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
| HYS64D64020GU-8-A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?512MB (64Mx64) PC1600 2-bank? |
| HYS64D64020GU-8-B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:184-Pin Unbuffered Dual-In-Line Memory Modules |
| HYS64D64020HBDL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:200-Pin Small Outline Dual-In-Line Memory Modules |
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