參數(shù)資料
型號: HYS 64V16300GU
廠商: SIEMENS AG
英文描述: 3.3 V 16M × 64-Bit 1 Bank SDRAM Module(3.3 V 16M × 64-位 1列 同步動態(tài)RAM模塊)
中文描述: 3.3伏1,600 × 64位一銀行內(nèi)存模塊(3.3伏1,600 × 64 -位一列同步動態(tài)內(nèi)存模塊)
文件頁數(shù): 8/17頁
文件大?。?/td> 119K
代理商: HYS 64V16300GU
HYS 64/72V16300/32220GU
SDRAM-Modules
INFINEON Technologies
8
2.00
Operating Currents per SDRAM Component
1)
T
A
= 0 to 70
o
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Parameter
Test
Condition
Symbol
-7.5
-8
Unit Note
max.
Operating Current
t
RC
=
t
RCMIN.
,
t
CK
=
t
CKMIN.
Outputs open, Burst Length = 4, CL = 3
All banks operated in random access,
all banks operated in ping-pong manner
to maximize gapless data access
I
CC1
160
150
mA
1)
Precharge Standby Current
in Power Down Mode
CS =
V
IH
(min.), CKE
V
IL(MAX)
Precharge Stand-by Current
in Non-Power Down Mode
t
CK
= min.
I
CC2P
1.5
1.5
mA
1)
CS =
V
IH (MIN.)
, CKE
V
IH(MIN)
No Operating Current
t
CK
= min.
I
CC2N
40
35
mA
1)
t
CK
= min., CS =
V
IH(MIN)
,
active state (max. 4 banks)
CKE
V
IH(MIN.)
I
CC3N
CKE
V
IL(MAX.)
I
CC3P
50
45
mA
1)
10
10
mA
1)
Burst Operating Current
t
CK
= min.,
Read command cycling
I
CC4
100
90
mA
1), 2)
Auto-Refresh Current
t
CK
= min.,
Auto-Refresh command cycling
I
CC5
230
210
mA
1)
Self-Refresh Current
Self-Refresh Mode, CKE = 0.2 V
I
CC6
1.5
1.5
mA
1)
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