參數(shù)資料
型號(hào)： HYS64D32020GDL-6-B
廠商： INFINEON TECHNOLOGIES AG
英文描述： 200-Pin Small Outline Dual-In-Line Memory Modules
中文描述： 200引腳小外型雙列直插內(nèi)存模塊
文件頁(yè)數(shù)： 14/31頁(yè)
文件大小： 777K
代理商： HYS64D32020GDL-6-B
Data Sheet
14
V1.2, 2003-08
HYS64D[1600x/32020]GDL–[5/6/7/8]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
Input Leakage Current
I
I
–2
2
μ
A
Any input 0 V
≤
V
IN
≤
V
DD
;
All other pins not under test
= 0 V
8)9)
DQs are disabled;
0 V
≤
V
OUT
≤
V
DDQ
8)
V
OUT
= 1.95 V
8)
Output Leakage Current
I
OZ
–5
5
μ
A
Output High Current,
Normal Strength Driver
Output Low
Current, Normal Strength
Driver
I
OH
—
–16.2
mA
I
OL
16.2
—
mA
V
OUT
= 0.35 V
8)
1) 0
°
C
≤
T
A
≤
70
°
C
2) DDR400 conditions apply for all clock frequencies above 166 MHz
3) Under all conditions,
V
DDQ
must be less than or equal to
V
DD
.
4) Peak to peak AC noise on
V
REF
may not exceed ± 2%
V
REF (DC)
.
V
REF
is also expected to track noise variations in
V
DDQ
.
5)
V
TT
is not applied directly to the device.
V
TT
is a system supply for signal termination resistors, is expected to be set equal
to
V
REF
, and must track variations in the DC level of
V
REF
.
6)
V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
7) The ration of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the
maximum difference between pull-up and pull-down drivers due to process variation.
8) Inputs are not recognized as valid until
V
REF
stabilizes.
9) Values are shown per DDR SDRAM component
Table 7
Parameter
Electrical Characteristics and DC Operating Conditions
(cont’d)
Symbol
Min.
Values
Typ.
Unit Note/Test Condition
1)
Max.
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