參數(shù)資料
型號(hào): HYS64D64020GBDL-6-C
廠商: INFINEON TECHNOLOGIES AG
英文描述: 200-Pin Small Outline Dual-In-Line Memory Modules
中文描述: 200引腳小外型雙列直插內(nèi)存模塊
文件頁數(shù): 17/27頁
文件大?。?/td> 692K
代理商: HYS64D64020GBDL-6-C
Data Sheet
17
Rev. 1.1, 2004-05
HYS64D64020[H/G]BDL–[5/6]–C
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 11
Product Type
I
DD
Specification for HYS64D64020[G/H]BDL–5–C
HYS64D64020GBDL–5–C
HYS64D64020HBDL–5–C
Organization
512MB
×
64
2 Ranks
–5
Symbol
Typ.
I
DD0
940
I
DD1
1100
I
DD2P
480
I
DD2F
320
I
DD2Q
210
I
DD3P
610
I
DD3N
690
I
DD4R
1140
I
DD4W
1140
I
DD5
360
I
DD6
16
I
DD7
2020
Unit
Note
1)2)
1) Module
I
DD
values are calculated on the basis of component
I
DD
and can be measured differently according to DQ
loading capacity.
2) Test condition for maximum values:
V
DD
= 2.7 V,
T
A
= 10 °C
3) The module
I
DDx
values are calculated from the
I
DDx
values of the component data sheet as follows:
m
×
I
DDx
[component] +
n
×
I
DD3N
[component] with
m
and
n
number of components of rank 1 and 2;
n
=0 for 1 rank
modules
4) DQ I/O (
I
DDQ
) currents are not included in the calculations (see note 1)
5) The module
I
DDx
values are calculated from the corrponent
I
DDx
data sheet values as: (
m
+
n
)
×
I
DDx
[component]
Max.
1150
1310
580
450
290
720
860
1390
1470
450
17.6
2430
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
相關(guān)PDF資料
PDF描述
HYS64D64020GBDL-5-C 200-Pin Small Outline Dual-In-Line Memory Modules
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