參數(shù)資料
型號(hào): HYS64D64020GBDL-6-C
廠商: INFINEON TECHNOLOGIES AG
英文描述: 200-Pin Small Outline Dual-In-Line Memory Modules
中文描述: 200引腳小外型雙列直插內(nèi)存模塊
文件頁(yè)數(shù): 21/27頁(yè)
文件大?。?/td> 692K
代理商: HYS64D64020GBDL-6-C
HYS64D64020[H/G]BDL–[5/6]–C
Small Outline DDR SDRAM Modules
SPD Contents
Data Sheet
21
Rev. 1.1, 2004-05
4
SPD Contents
Table 14
Product Type
Organization
SPD Codes for HYS64D64020HBDL–5–C and HYS64D64020GBDL–5–C
HYS64D64020GBDL–5–C
512 MB
×
64
2 Ranks (
×
8)
PC3200S–3033–1
Rev 1.0
HEX
80
08
07
0D
0A
02
40
00
04
50
50
00
82
08
00
01
0E
04
1C
01
02
20
C1
60
50
75
50
3C
28
3C
28
40
60
HYS64D64020HBDL–5–C
512 MB
×
64
2 Ranks (
×
8)
Label Code
JEDEC SPD Revision
Byte#
Description
0
Programmed SPD Bytes in E2PROM
1
Total number of Bytes in E2PROM
2
Memory Type (DDR = 07h)
3
Number of Row Addresses
4
Number of Column Addresses
5
Number of DIMM Ranks
6
Data Width (LSB)
7
Data Width (MSB)
8
Interface Voltage Levels
9
t
CK
@ CL
max
(Byte 18) [ns]
10
t
AC
SDRAM @ CL
max
(Byte 18) [ns]
11
Error Correction Support
12
Refresh Rate
13
Primary SDRAM Width
14
Error Checking SDRAM Width
15
t
CCD
[cycles]
16
Burst Length Supported
17
Number of Banks on SDRAM Device
18
CAS Latency
19
CS Latency
20
Write Latency
21
DIMM Attributes
22
Component Attributes
23
t
CK
@ CL
max
-0.5 (Byte 18) [ns]
24
t
AC
SDRAM @ CL
max
-0.5 [ns]
25
t
CK
@ CL
max
-1 (Byte 18) [ns]
26
t
AC
SDRAM @ CL
max
-1 [ns]
27
t
RPmin
[ns]
28
t
RRDmin
[ns]
29
t
RCDmin
[ns]
30
t
RASmin
[ns]
31
Module Density per Rank
32
t
AS,
t
CS
[ns]
Rev 1.0
HEX
80
08
07
0D
0A
02
40
00
04
50
50
00
82
08
00
01
0E
04
1C
01
02
20
C1
60
50
75
50
3C
28
3C
28
40
60
相關(guān)PDF資料
PDF描述
HYS64D64020GBDL-5-C 200-Pin Small Outline Dual-In-Line Memory Modules
HYS64D64020GDL 200-Pin Small Outline Dual-In-Line Memory Modules
HYS64D64020GBDL-6-B 200-Pin Small Outline Dual-In-Line Memory Modules
HYS64D64020GDL-6-B 200-Pin Small Outline Dual-In-Line Memory Modules
HYS64D64020GBDL-8-B 200-Pin Small Outline Dual-In-Line Memory Modules
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