參數(shù)資料
型號: HYS64D64020GU-8-B
廠商: INFINEON TECHNOLOGIES AG
英文描述: 184-Pin Unbuffered Dual-In-Line Memory Modules
中文描述: 184引腳緩沖雙列內(nèi)存模組
文件頁數(shù): 20/51頁
文件大?。?/td> 1356K
代理商: HYS64D64020GU-8-B
1136
1530
13.5
22.5
1350
1890
HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Data Sheet
20
V1.1, 2003-07
Table 11
Operating, Standby and Refresh Currents (PC2100, –8)
P
Symbol
I
DD0
I
DD1
I
DD2P
I
DD2F
I
DD2Q
I
DD3P
I
DD3N
I
DD4R
I
DD4W
I
DD5
I
DD6
I
DD7
H
128MB
×
64
1 rank
typ.
288
332
20
120
72
52
168
356
384
504.8
6
632
H
256MB
×
64
1 rank
typ.
560
640
40
240
144
104
320
632
680
1010
12
1200
H
256MB
×
72
1 rank
typ.
630
720
45
270
162
117
360
711
765
H
512MB
×
64
2 ranks
typ.
880
960
80
480
288
208
640
952
1000
1330
24
1520
H
512MB
×
72
2 ranks
typ.
990
1080
90
540
324
234
720
1071
1125
1496
27
1710
Unit
Note
1)2)
max.
380
420
28
140
88
64
200
440
480
680
10
880
max.
720
800
56
280
176
128
360
760
840
1360
20
1680
max.
810
900
63
315
198
144
405
855
945
max.
1080
1160
112
560
352
256
720
1120
1200
1720
40
2040
max.
1215
1305
126
630
396
288
810
1260
1350
1935
45
2295
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
1) DRAM component currents only
2) Test condition for maximum values:
V
DD
= 2.7 V,
T
A
= 10 °C
3) The module
I
DDx
values are calculated from the component
I
DDx
data sheet values as:
m
×
I
DDx
[component] +
n
×
I
DD3N
[component] with
m
and
n
number of components of rank 1 and 2;
n
=0 for 1 rank modules
4) DQ I/O (
I
DDQ
) currents are not included into calculations: module
I
DD
values will be measured differently depending on load
conditions
5) The module
I
DDx
values are calculated from the corrponent
I
DDx
data sheet values as: (
m
+
n
)
×
I
DDx
[component]
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