參數(shù)資料
型號(hào): HYS64D64020GU-8-B
廠商: INFINEON TECHNOLOGIES AG
英文描述: 184-Pin Unbuffered Dual-In-Line Memory Modules
中文描述: 184引腳緩沖雙列內(nèi)存模組
文件頁數(shù): 23/51頁
文件大小: 1356K
代理商: HYS64D64020GU-8-B
1395
14.4
2160
Data Sheet
23
V1.1, 2003-07
HYS[64/72]D[16x01/32x00/64x20][G/E]U-[5/6/7/8]-B
Unbuffered DDR SDRAM Modules
Electrical Characteristics
Table 14
Operating, Standby and Refresh Currents (PC3200, –5)
P
Symbol
I
DD0
I
DD1
I
DD2P
I
DD2F
I
DD2Q
I
DD3P
I
DD3N
I
DD4R
I
DD4W
I
DD5
I
DD6
I
DD7
H
128MB
×
64
1 rank
typ.
400
460
24
184
96
68
240
560
600
620
6.4
1040
H
256MB
×
64
1 rank
typ.
720
840
48
368
192
136
456
920
1000
1240
12.8
1920
H
256MB
×
72
1 rank
typ.
810
945
54
414
216
153
513
1035
1125
H
512MB
×
64
2 ranks
typ.
1176
1296
96
736
384
272
912
1376
1456
1696
25.6
2376
H
512MB
×
72
2 ranks
typ.
132
1458
108
828
432
306
1026
1548
1638
1908
28.8
2673
Unit Note
1)2)
max.
480
540
36
224
136
96
296
700
720
780
10.4
1240
max.
920
1000
72
448
272
192
552
1160
1200
1560
20.8
2240
max.
1035
1125
81
504
306
216
621
1305
1350
1755
23.4
2520
max.
1472
1552
144
896
544
384
1104
1712
1752
2112
41.6
2792
max.
1656
1746
162
1008
612
432
1242
1926
1971
2376
46.8
3141
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
3)
3)4)
5)
5)
5)
5)
5)
3)4)
3)
3)
5)
3)4)
1) DRAM component currents only
2) Test condition for maximum values:
V
DD
= 2.7 V,
T
A
= 10 °C
3) The module
I
DDx
values are calculated from the component
I
DDx
data sheet values as:
m
×
I
DDx
[component] +
n
×
I
DD3N
[component] with
m
and
n
number of components of rank 1 and 2;
n
=0 for 1 rank modules
4) DQ I/O (
I
DDQ
) currents are not included into calculations: module
I
DD
values will be measured differently depending on load
conditions
5) The module
I
DDx
values are calculated from the corrponent
I
DDx
data sheet values as: (
m
+
n
)
×
I
DDx
[component]
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