參數(shù)資料
型號： HYS64T32000HDL
廠商： INFINEON TECHNOLOGIES AG
英文描述： 200-Pin Small Outline Dual-In-Line Memory Module
中文描述： 200引腳小外型雙列內(nèi)存模組
文件頁數(shù)： 23/67頁
文件大小： 1527K
代理商： HYS64T32000HDL
HYS[64T[3200/6400/12802]0/72T[6400/12802]0][G/H]U–[3.7/5]–A
512 Mbit DDR2 SDRAM
Electrical Characteristics
Data Sheet
23
Rev. 0.87, 2004-06
09122003-GZEK-H4J6
3
Electrical Characteristics
3.1
Operating Conditions
Note:Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
Table 13
Parameter
Absolute Maximum Ratings
Symbol
Limit Values
min.
– 0.5
– 1.0
– 0.5
-55
5
Unit
max.
2.3
2.3
2.3
+100
95
Voltage on any pins relative to
V
SS
Voltage on V
DD
relative to
V
SS
Voltage on V
DD Q
relative to
V
SS
Storage temperature range
Storage Humidity (without condensation)
V
IN
,
V
OUT
V
DD
V
DDQ
T
HSTG
H
STG
V
V
°
C
%
Table 14
Parameter
Operating Conditions
Symbol
Limit Values
min.
0
0
+69
Unit
Notes
max.
+55
+95
+105
DIMM Module Operating Temperature Range (ambient)
DRAM Component Case Temperature Range
Barometric Pressure (operating & storage)
T
OPR
T
CASE
PBar
°
C
°
C
kPa
1)2)3)4)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the
DRAMs. For measurement conditions, please refer to the JEDEC document JESD51-2.
2) Within the DRAM Component Case Temperature range all DRAM specification will be supported.
3)
Above 85
°
C
DRAM case temperature the Auto-Refresh command interval has to be reduced to
t
REFI
= 3.9 μs.
4)
Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the
DRAM is below 85
°
C
case temperature before initiating self-refresh operation.
Table 15
Parameter
Supply Voltage Levels and DC Operating Conditions
Symbol
Limit Values
min.
1.7
1.7
0.49 x
V
DDQ
1.7
V
REF
+ 0.125
– 0.30
– 5
Unit
Notes
nom.
1.8
1.8
0.5 x
V
DDQ
–
–
–
max.
1.9
1.9
0.51 x
V
DDQ
3.6
V
DDQ
+ 0.3
V
REF
– 0.125
5
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
EEPROM Supply Voltage
DC Input Logic High
DC Input Logic Low
In / Output Leakage Current
V
DD
V
DDQ
V
REF
V
DDSPD
V
IH (DC)
V
IL (DC)
I
L
V
V
V
V
V
V
μ
A
-
1)
1)
Under all conditions,
V
DDQ
must be less than or equal to
V
DD
2)
Peak to peak AC noise on
V
REF
may not exceed ± 2%
V
REF
(DC).
V
REF
is also expected to track noise variations
in
V
DDQ
.
3)
Voltage for pin connector under test input of 0 V
≤
V
IN
≤
V
DDQ
+ 0.3 V; all othe pins at 0 V. Current is per pin
2)
3)
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