參數(shù)資料
型號(hào)： HYS64T64020LM-37-A
廠商： INFINEON TECHNOLOGIES AG
英文描述： Double-Data-Rate-Two SDRAM Micro-DIMM
中文描述： 雙數(shù)據(jù)速率- 2 SDRAM的微型DIMM
文件頁(yè)數(shù)： 17/31頁(yè)
文件大小： 955K
代理商： HYS64T64020LM-37-A
T
STG
Preliminary
HYS64T[3200/6402]0[H/K/L]M–[3.7/5]–A
Double-Data-Rate-Two SDRAM Micro-DIMM
Electrical Characteristics
Data Sheet
17
Rev. 0.6, 2004-06
03242004-2CBE-IJ2X
3
Electrical Characteristics
3.1
Operating Conditions
Table 9
Parameter
Absolute Maximum Ratings
Symbol
Values
Min.
– 0.5
– 1.0
– 0.5
5
Unit
Note/Test
Condition
Max.
2.3
2.3
2.3
95
Voltage on any pins relative to
V
SS
Voltage on
V
DD
relative to
V
SS
Voltage on
V
DDQ
relative to
V
SS
Storage Humidity (without condensation)
H
STG
V
IN
,
V
OUT
V
DD
V
DDQ
V
V
V
%
1)
1) Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability
1)
1)
1)
Table 10
Parameter
Operating Conditions
Symbol
Values
min.
0
0
– 50
105
10
Unit
Notes
max.
+65
+95
+100
69
90
Operating temperature (ambient)
DRAM Case Temperature
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
T
OPR
T
CASE
°
C
°
C
°
C
kPa
%
1)2)3)4)
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs. For
measurement conditions, please refer to the JEDEC document JESD51-2
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported
3) Above 85
°
C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to
t
REFI
= 3.9
μ
s
4) Self-Refresh period is hard-coded in the DRAMs and therefore it is imperative that the system ensures the DRAM is below
85
°
C Case Temperature before initiating Self-Refresh operation.
5) Up to 3000 m.
5)
H
OPR
Table 11
Parameter
Supply Voltage Levels and DC Operating Conditions
Symbol
Limit Values
min.
1.7
1.7
0.49
×
V
DDQ
1.7
V
REF
+ 0.125
– 0.30
Unit
Notes
nom.
1.8
1.8
0.5
×
V
DDQ
—
—
—
max.
1.9
1.9
0.51
×
V
DDQ
3.6
V
DDQ
+ 0.3
V
REF
– 0.125
Device Supply Voltage
Output Supply Voltage
Input Reference Voltage
SPD Supply Voltage
DC Input Logic High
DC Input Logic Low
V
DD
V
DDQ
V
REF
V
DDSPD
V
IH (DC)
V
IL (DC)
V
V
V
V
V
V
—
1)
1) Under all conditions,
V
DDQ
must be less than or equal to
V
DD
2) Peak to peak AC noise on
V
REF
may not exceed ± 2%
V
REF (DC)
.
V
REF
is also expected to track noise in
V
DDQ
.
2)
相關(guān)PDF資料
PDF描述
HYS64T64020LM-5-A Double-Data-Rate-Two SDRAM Micro-DIMM
HYS64T64020GDL 200-Pin Small Outline Dual-In-Line Memory Module
HYS64T64020HM-37-A Double-Data-Rate-Two SDRAM Micro-DIMM
HYS64T64020HM-5-A Double-Data-Rate-Two SDRAM Micro-DIMM
HYS64T64020GDL-37-A 200-Pin Small Outline Dual-In-Line Memory Module
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYS64T64020LM-5-A 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Double-Data-Rate-Two SDRAM Micro-DIMM
HYS64T64900EU-2.5-B2 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
HYS64T64900EU-25F-B2 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
HYS64T64900EU-3.7-B2 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
HYS64T64900EU-3-B2 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:240-Pin unbuffered DDR2 SDRAM Modules
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*