參數(shù)資料
型號: HYS64T64020LM-37-A
廠商: INFINEON TECHNOLOGIES AG
英文描述: Double-Data-Rate-Two SDRAM Micro-DIMM
中文描述: 雙數(shù)據(jù)速率- 2 SDRAM的微型DIMM
文件頁數(shù): 22/31頁
文件大?。?/td> 955K
代理商: HYS64T64020LM-37-A
7.5
Preliminary
HYS64T[3200/6402]0[H/K/L]M–[3.7/5]–A
Double-Data-Rate-Two SDRAM Micro-DIMM
Electrical Characteristics & AC Timings
Data Sheet
22
Rev. 0.6, 2004-06
03242004-2CBE-IJ2X
Data Output hold time from DQS
Data hold skew factor
Active to Precharge command
Active to Active/Auto-refresh
command period
Active to Read or Write delay (with
and without Auto-Precharge) delay
Average Periodic Refresh Interval
t
QH
t
QHS
t
RAS
t
RC
t
HP
t
QHS
45
60
400
70000
t
HP
t
QHS
45
60
450
70000
t
CK
ps
ns
ns
t
RCD
15
15
ns
t
REFI
105
7.8
3.9
105
7.8
3.9
μ
s
μ
s
ns
4)
5)
Auto-refresh to Active/Auto-refresh
command period
Precharge command period
Read preamble
Read postamble
Active bank A to Active bank B
command
Internal read to precharge command
delay
Write preamble
Write postamble
Write recovery time
Internal write to read command delay
t
WTR
Exit power down to any valid
command
(other than NOP or Deselect)
Exit active power-down mode to read
command (slew exit, lower power)
Exit precharge power-down to any
valid command (other than NOP or
Deselect)
Exit Self-Refresh to non-read
command
Exit Self-Refresh to read command
t
RFC
t
RP
t
RPRE
t
RPST
t
RRD
15
0.9
0.40
10
1.1
0.60
15
0.9
0.40
10
1.1
0.60
ns
t
CK
t
CK
ns
t
RTP
7.5
ns
t
WPRE
t
WPST
t
WR
0.25
0.40
15
7.5
2
0.60
0.25
0.40
15
10
2
0.60
t
CK
t
CK
ns
ns
t
CK
t
XARD
t
XARDS
6
AL
6
AL
t
CK
t
XP
2
2
t
CK
t
XSNR
t
RFC
+ 10
t
RFC
+ 10
ns
t
XSRD
200
200
t
CK
1) For details and notes see the relevant INFINEON component datasheet
2) CL = 3
3) CL = 4 & 5
4)
0 °C
T
CASE
85 °C
5) 85 °C
<
T
CASE
95 °C
Table 16
Parameter
AC Timing - Absolute Specifications
5/
3.7
1)
Symbol
3.7
5
Unit Notes
PC2-4200M
Min.
PC2-3200M
Min.
Max.
Max.
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