參數(shù)資料
型號: HYS64V64220GU-7-D
廠商: INFINEON TECHNOLOGIES AG
英文描述: 3.3 V 64M x 64/72-Bit, 512MByte SDRAM Modules 168-pin Unbuffered DIMM Modules
中文描述: 3.3伏6400 x 64/72-Bit,512MByte SDRAM內(nèi)存模塊168針腳無緩沖DIMM模塊
文件頁數(shù): 5/15頁
文件大?。?/td> 105K
代理商: HYS64V64220GU-7-D
HYS 64/72V64220GU
SDRAM-Modules
INFINEON Technologies
5
9.01
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V
SS
Power supply voltage on V
DD
Storage temperature range
V
IN,
V
OUT
1.0
4.6
V
V
DD
1.0
4.6
V
T
STG
-55
+150
o
C
Power dissipation per SDRAM component
P
D
1
W
Data out current (short circuit)
I
OS
50
mA
Permanent device damage may occur if
Absolute Maximum Ratings
are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
Input Low Voltage
Output High Voltage (
I
OUT
=
4.0 mA)
Output Low Voltage (
I
OUT
= 4.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
< 3.6 V, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
0.5
V
2.4
V
0.4
V
μ
A
40
40
I
O(L)
40
40
μ
A
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
max.
64M
×
64
105
max.
64M
×
72
144
Input Capacitance
(
A0 to A11, BA0, BA1, RAS, CAS, WE)
C
I1
pF
Input Capacitance (CS0 - CS3)
C
I2
C
ICL
C
I3
C
I4
C
IO
C
SC
C
SD
32
40
pF
Input Capacitance (CLK0 - CLK3)
40
43
pF
Input Capacitance (CKE0, CKE1)
65
72
pF
Input Capacitance (DQMB0 - DQMB7)
20
25
pF
Input/Output Capacitance (DQ0 - DQ63, CB0 - CB7)
17
17
pF
Input Capacitance (SCL, SA0-2)
8
8
pF
Input/Output Capacitance
8
8
pF
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