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參數(shù)資料
| 型號(hào)： | HYS64V8200GU-8 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
| 中文描述： | 8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 |
| 封裝： | DIMM-168 |
| 文件頁數(shù)： | 6/15頁 |
| 文件大?。?/td> | 248K |
| 代理商： | HYS64V8200GU-8 |
INFINEON Technologies
6
9.01
HYS64V8200GDL/HYS64V16220GDL
144 pin SO-DIMM SDRAM Modules
Absolute Maximum Ratings
DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input / Output voltage relative to V
SS
Power supply voltage on V
DD
Storage temperature range
V
IN,
V
OUT
V
DD
T
STG
P
D
I
OS
– 1.0
4.6
V
– 1.0
4.6
V
-55
+150
o
C
Power dissipation (per SDRAM component)
–
1
W
Data out current (short circuit)
–
50
mA
Permanent device damage may occur if
“
Absolute Maximum Ratings
”
are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Parameter
Symbol
Limit Values
Unit
min.
max.
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
2.0
Vcc+0.3
V
Input low voltage
–
0.5
0.8
V
Output high voltage (
I
OUT
=
–
4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
I
N
< 3.6 V, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
2.4
–
V
–
0.4
V
–
20
20
μ
A
I
O(L)
–
20
20
μ
A
Parameter
Symbol
Limit Values
Unit
8M x 64
max.
16M x 64
max.
Input capacitance (A0 to A11, BA0, BA1)
C
I
1
C
I
2
C
I
3
C
I
4
C
I
5
C
I
O
C
sc
C
sd
28
52
pF
Input capacitance (RAS, CAS, WE, CKE0)
25
46
pF
Input Capacitance (CLK0, CLK1)
35
35
pF
Input capacitance (CS0)
25
30
pF
Input capacitance (DQMB0-DQMB7)
10
15
pF
Input / Output capacitance (DQ0-DQ63)
12
18
pF
Input Capacitance (SCL,SA0-2)
8
8
pF
Input/Output Capacitance
0
10
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYS64V8200GU-8B | 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
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| HYS72V16300GU-75-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
| HYS72V32220GU-75-C2 | 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYS64V8200GU-8B | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module |
| HYS64V8220GCDL-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYS64V8220GDL-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 SDRAM Module |
| HYS64V8220GU-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module |
| HYS64V8220GU-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module |
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