參數(shù)資料
型號(hào): HYS72V16220GU-10
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module
中文描述: 16M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168
封裝: DIMM-168
文件頁(yè)數(shù): 1/17頁(yè)
文件大小: 84K
代理商: HYS72V16220GU-10
Semiconductor Group
1
1998-08-01
3.3 V 8M
×
64/72-Bit 1 Bank SDRAM Module
3.3 V 16M
×
64/72-Bit 2 Bank SDRAM Module
168 pin unbuffered DIMM Modules
HYS 64/72V8200GU
HYS 64/72V16220GU
168 Pin PC100-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules
for PC main memory applications
1 bank 8M
×
64, 8M
×
72 and 2 bank 16M
×
64, 16M
×
72 organization
Optimized for byte-write non-parity or ECC applications
JEDEC standard Synchronous DRAMs (SDRAM)
Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification
SDRAM Performance
Programmed Latencies
Single + 3.3 V (
±
0.3 V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E
2
PROM
Utilizes 8M
×
8 SDRAMs in TSOPII-54 packages
4096 refresh cycles every 64 ms
133.35 mm
×
31.75 mm
×
4.00 mm card size with gold contact pads
-8
-8B
-10
Units
f
CK
t
AC
Clock frequency (max.)
100
100
66
MHz
Clock access time
6
6
8
ns
Product Speed
CL
t
RCD
2
t
RP
2
-8
PC100
2
-8B
PC100
3
2
3
-10
PC66
2
2
2
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