參數(shù)資料
型號: IC41C4105-50T
英文描述: 1Mx4 bit Dynamic RAM with Fast Page Mode
中文描述: 1Mx4位動態(tài)RAM的快速頁面模式
文件頁數(shù): 2/17頁
文件大?。?/td> 510K
代理商: IC41C4105-50T
IC41C4105 and IC41LV4105
2
Integrated Circuit Solution Inc.
DR019-0A 08/01/2001
FEATURES
Fast Page Mode Access Cycle
TTL compatible inputs and outputs
Refresh Interval:
-- 1,024 cycles/16 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR), and Hidden
JEDEC standard pinout
Single power supply:
5V ± 10% or 3.3V ± 10%
Byte Write and Byte Read operation via
two
CAS
DESCRIPTION
The
ICSI
4105 Series is a 1,048,576 x 4-bit high-performance
CMOS Dynamic Random Access Memory. The Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 12 ns per 4-bit word.
These features make the 4105 Series ideally suited for high-
bandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The 4105 Series is packaged in a 20-pin 300mil SOJ and a 20
pin TSOP-2
1M x 4 (4
-
MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
KEY TIMING PARAMETERS
Parameter
RAS
Access Time (t
RAC
)
CAS
Access Time (t
CAC
)
Column Address Access Time (t
AA
)
Fast Page Mode Cycle Time (t
PC
)
Read/Write Cycle Time (t
RC
)
-
35
35
10
18
12
60
-50
50
14
25
20
90
-
60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
which may appear in this publication. Copyright 2000, Integrated Circuit Solution Inc.
PRODUCT SERIES OVERVIEW
Part No.
Refresh
Voltage
IC41C4105
1K
5V ± 10%
IC41LV4105
1K
3.3V ± 10%
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-3
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
Vcc
Power
GND
Ground
PIN CONFIGURATION
20 (26) Pin SOJ, TSOP
-
2
相關PDF資料
PDF描述
IC41C4105-60J 1Mx4 bit Dynamic RAM with Fast Page Mode
IC41C4105-60T 1Mx4 bit Dynamic RAM with Fast Page Mode
IC41LV4105 1Mx4 bit Dynamic RAM with Fast Page Mode
IC41LV4105-35J 1Mx4 bit Dynamic RAM with Fast Page Mode
IC41LV4105-35T 1Mx4 bit Dynamic RAM with Fast Page Mode
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