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參數(shù)資料
| 型號(hào)： | IC41LV8512-50K |
| 英文描述： | 10:1 LVDS Serdes Transmitter 100-400 Mbps 28-SSOP -40 to 85 |
| 中文描述： | 為512k × 8位動(dòng)態(tài)隨機(jī)存儲(chǔ)器與江戶頁面模式 |
| 文件頁數(shù)： | 2/21頁 |
| 文件大?。?/td> | 232K |
| 代理商： | IC41LV8512-50K |
IC41C8512
IC41LV8512
2
Integrated Circuit Solution Inc.
DR029-0A 09/28/2001
FEATURES
Extended Data-Out (EDO) Page Mode access cycle
TTL compatible inputs and outputs; tristate I/O
Refresh Interval: 1024 cycles /16 ms
Refresh Mode:
RAS
-Only,
CAS
-before-
RAS
(CBR),
Hidden
Single power supply:
5V ± 10% (IC41C8512)
3.3V ± 10% (IC41LV8512)
Industrail Temperature Range -40
o
C to 85
o
C
DESCRIPTION
The
ICSI
IC41C8512 and IC41LV8512 is a 524,288 x 8-bit high-
performance CMOS Dynamic Random Access Memories. The
IC41C8512 offer an accelerated cycle access called EDO Page
Mode. EDO Page Mode allows 1024 random accesses within
a single row with access cycle time as short as 12 ns per 8-bit
word.
These features make the IC41C8512and IC41LV8512 ideally
suited for, digital signal processing, high-performance audio
systems, and peripheral applications.
The IC41C8512 is packaged in a 28-pin 400mil SOJ and 400mil
TSOP-2.
512K x 8 (4-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
KEY TIMING PARAMETERS
Parameter
Max.
RAS
Access Time (t
RAC
)
Max.
CAS
Access Time (t
CAC
)
Max. Column Address Access Time (t
AA
)
Min. EDO Page Mode Cycle Time (t
PC
)
Min. Read/Write Cycle Time (t
RC
)
-35
35
10
18
12
60
-50
50
14
25
20
90
-60
60
15
30
25
110
Unit
ns
ns
ns
ns
ns
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-7
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
CAS
Column Address Strobe
Vcc
Power
GND
Ground
NC
No Connection
PIN CONFIGURATION
28 Pin SOJ, TSOP
-
2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
I/O0
I/O1
I/O2
I/O3
NC
WE
RAS
A9
A0
A1
A2
A3
VCC
GND
I/O7
I/O6
I/O5
I/O4
CAS
OE
NC
A8
A7
A6
A5
A4
GND
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IC41C8512-50K | 512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41C8512-50KI | 512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41C8512-50T | 512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41C8512-50TI | 512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41C8512-60K | 512K x 8 bit Dynamic RAM with EDO Page Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IC41LV8512-50KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41LV8512-50T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41LV8512-50TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41LV8512-60K | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with EDO Page Mode |
| IC41LV8512-60KI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:512K x 8 bit Dynamic RAM with EDO Page Mode |
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