參數(shù)資料
型號(hào): IC42S16100-6T
英文描述: 512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 為512k × 16位× 2組(16兆)同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 5/78頁(yè)
文件大小: 789K
代理商: IC42S16100-6T
IC42S16100
Integrated Circuit Solution Inc.
DR024-0D 06/25/2004
5
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Parameters
Rating
Unit
V
CC
MAX
V
CCQ
V
IN
V
OUT
P
D
MAX
I
CS
T
OPR
T
STG
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
–1.0 to +4.6
1
50
0 to +70
–55 to +150
V
V
V
V
W
mA
°C
°C
MAX
DC RECOMMENDED OPERATING CONDITIONS
(2)
(
At T
A
= 0 to +70°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
V
CC
, V
CC
Q
V
IH
V
IL
Supply Voltage
Input High Voltage
(3)
Input Low Voltage
(4)
3.0
2.0
-0.3
3.3
3.6
V
V
V
V
DD
+ 0.3
+0.8
CAPACITANCE CHARACTERISTICS
(1,2)
(At T
A
= 0 to +25°C, Vcc = VccQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
C
IN
1
C
IN
2
CI/O
Input Capacitance: A0-A11
Input Capacitance: (CLK, CKE,
CS
,
RAS
,
CAS
,
WE
, LDQM, UDQM)
Data Input/Output Capacitance: I/O0-I/O15
4
4
5
pF
pF
pF
Notes:
1.
Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
All voltages are referenced to GND.
V
IH
(max) = V
CCQ
+ 2.0V with a pulse width
3 ns.
V
IL
(min) = GND – 2.0V with a pulse < 3 ns and -1.5V with a pulse < 5ns.
2.
3.
4.
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IC42S16100-6TG 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
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IC42S16100-6TIG 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
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