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參數(shù)資料
| 型號： | ICS813323BGLFT |
| 廠商： | IDT, Integrated Device Technology Inc |
| 文件頁數(shù)： | 9/22頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC ATTENUATOR/MULTIPLIER 24TSSOP |
| 標準包裝： | 2,500 |
| 系列： | HiPerClockS™, FemtoClock™ |
| 類型： | 扇出配送，頻率變換器，抖動衰減器，壓控晶體振蕩器（VCXO） |
| PLL： | 帶旁路 |
| 輸入： | HCSL，LVDS，LVHSTL，LVPECL，SSTL |
| 輸出： | LVPECL |
| 電路數(shù)： | 1 |
| 比率 - 輸入:輸出： | 2:3 |
| 差分 - 輸入:輸出： | 是/是 |
| 頻率 - 最大： | 622.08MHz |
| 除法器/乘法器： | 是/無 |
| 電源電壓： | 3.135 V ~ 3.465 V |
| 工作溫度： | 0°C ~ 70°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-TSSOP（0.173"，4.40mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 24-TSSOP |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | 813323BGLFT |
ICS813323BG REVISION A APRIL 13, 2010
17
2010 Integrated Device Technology, Inc.
ICS813323 Data Sheet
VCXO JITTER ATTENUATOR & FEMTOCLOCKMULTIPLIER
VCXO-PLL EXTERNAL COMPONENTS
Choosing the correct external components and having a proper
printed circuit board (PCB) layout is a key task for quality operation
of the VCXO-PLL. In choosing a crystal, special precaution must be
taken with the package and load capacitance (CL). In addition,
frequency, accuracy and temperature range must also be
considered. Since the pulling range of a crystal also varies with the
package, it is recommended that a metal-canned package like HC49
be used. Generally, a metal-canned package has a larger pulling
range than a surface mounted device (SMD). For crystal selection
information, refer to the VCXO Crystal Selection Application Note.
The crystal’s load capacitance (CL) characteristic determines it’s
resonating frequency and is closely related to the VCXO tuning
range. The total external capacitance seen by the crystal when
installed on a board is the sum of the stray board capacitance, IC
package lead capacitance, internal varactor capacitance and any
installed tuning capacitors (CTUNE).
If the crystal (CL) is greater than the total external capacitance, the
VCXO will oscillate at a higher frequency than the crystal
specification. If the crystal (CL) is lower than the total external
capacitance, the VCXO will oscillate at a lower frequency than the
crystal specification. In either case, the absolute tuning range is
reduced. The correct value of (CL) is dependant on the
characteristics of the VCXO. The recommended (CL) in the Crystal
Parameter Table balances the tuning range by centering the tuning
curve.
The frequency of oscillation in the third overtone mode is not
necessarily at exactly three times the fundamental frequency. The
mechanical properties of the quartz element dictate the position of
the overtones relative to the fundamental. The oscillator circuit may
excite both the fundamental and overtone modes simultaneously.
This will cause a nonlinearity in the tuning curve. This potential
problem is why VCXO crystals are required to be tested for absence
of any activity inside a ±200ppm window at three times the
fundamental frequency. Refer to FL_3OVT and FL_3OVT_spurs in the
crystal Characteristics table.
The crystal and external loop filter
components should be kept as
close as possible to the device.
Loop filter and crystal traces
should be kept short and
separated from each other. Other
signal traces should be kept
separate and not run underneath
the device, loop filter or crystal
components.
VCXO Characteristics Table
VCXO-PLL Loop Bandwidth Selection Table
Crystal Characteristics
LF
XTAL_IN
XTAL_OUT
RS
C
S
C
P
C
TUNE
C
TUNE
19.44MHz
Symbol
Parameter
Typical
Units
kVCXO
VCXO Gain
7625
Hz/V
CV_LOW
Low Varactor Capacitance
10.7
pF
CV_HIGH
High Varactor Capacitance
22
pF
Bandwidth
Crystal
Frequency
RS (k)CS (F)
CP (F)
185.7Hz (Low)
19.44MHz
0.68
10
0.1
742.7Hz (Mid)
19.44MHz
2.7
1.0
0.01
1.857kHz (High)
19.44MHz
6.8
0.1
0.001
Symbol
Parameter
Test Conditions
Minimum
Typical
Maximum
Units
Mode of Oscillation
Fundamental
fN
Frequency
19.44
MHz
fT
Frequency Tolerance
±20
ppm
fS
Frequency Stability
±20
ppm
Operating Temperature Range
0
+70
0C
CL
Load Capacitance
10
pF
CO
Shunt Capacitance
4
pF
CO / C1
Pullability Ratio
220
240
FL_3OVT
3rd Overtone FL
200
pmm
FL_3OVT_spurs
3rd Overtone FL Spurs
200
pmm
ESR
Equivalent Series Resistance
20
Drive Level
1mW
Aging @ 25 0C
±3 per year
ppm
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