參數(shù)資料
型號(hào): ICS93722
英文描述: Low Cost DDR Phase Lock Loop Zero Delay Buffer
中文描述: 低成本的DDR鎖相環(huán)零延遲緩沖器
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 54K
代理商: ICS93722
3
ICS93722
0539E—07/18/03
Absolute Maximum Ratings
Supply Voltage (VDD & AVDD) . . . . . . . . . . -0.5V to 3.6V
Logic Inputs . . . . . . . . . . . . . . . . . . . . . . . . . GND –0.5 V to V
DD
+0.5 V
Ambient Operating Temperature . . . . . . . . . 0°C to +85°C
Case Temperature . . . . . . . . . . . . . . . . . . . . 115°C
Storage Temperature . . . . . . . . . . . . . . . . . . –65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
ratings are stress specifications only and functional operation of the device at these or any other conditions above
those listed in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect product reliability.
Electrical Characteristics - Input / Supply / Common Output Parameters
T
A
= 0 - 70°C; Supply Voltage V
DD
= 2.5 V +/-0.2V (unless otherwise stated)
PARAMETER
Input High Current
Input Low Current
SYMBOL
I
IH
I
IL
I
DD2.5
I
DDPD
I
OH
I
OL
CONDITIONS
MIN
TYP
MAX
UNITS
μ
A
μ
A
mA
μ
A
mA
mA
V
IN
= V
DD
or GND
V
IN
= V
DD
or GND
C
L
= 0 pF at 133 MHz
C
L
= 0 pF
V
DD
= 2.3V, V
OUT
= 1V
V
DD
= 2.3V, V
OUT
= 1.2V
275
325
100
-18
Output High Current
Output High Current
-43
43
26
High Impedance Output
Current
Input Clamp Voltage
I
OZ
V
DD
= 2.7V, V
OUT
= V
DD
or GND
10
μ
A
V
IK
I
IN
= -18 mA;
V
DD
= min to max, I
OH
= -1mA
V
DD
= 2.3V, I
OH
= -12mA
V
DD
= min to max, I
OH
= 1mA
V
DD
= 2.3V, I
OH
= 12mA
V
IN
= V
DD
or GND
V
OUT
= V
DD
or GND
V
V
V
V
V
pF
pF
2.1
2.42
1.87
0.04
0.35
V
OL
0.1
0.6
Input Capacitance
1
Output Capacitance
1
C
IN
C
OUT
3
1. Guaranteed by design, not 100% tested in production.
Operating Supply Current
V
OH
Low-level Output Voltage
High-level Output Voltage
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