參數(shù)資料
型號: IDB12E120
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast Switching EmCon Diode
中文描述: 快速開關(guān)快恢復(fù)二極管
文件頁數(shù): 1/9頁
文件大小: 198K
代理商: IDB12E120
2003-07-31
Rev.2
Page 1
IDP12E120
IDB12E120
Fast Switching EmCon
Diode
Feature
1200 V EmCon
technology
Fast recovery
Soft switching
Low reverse recovery charge
Low forward voltage
Easy paralleling
Product Summary
V
RRM
I
F
V
F
T
jmax
1200
V
12
A
1.65
V
150
°C
P-TO220-3.SMD
P-TO220-2-2.
Pin 1
C
PIN 2
A
PIN 3
-
NC
C
A
Marking
D12E120
D12E120
Type
Package
Ordering Code
Q67040-S4389
IDP12E120
P-TO220-2-2.
IDB12E120
P-TO220-3.SMD Q67040-S4385
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
I
F
1200
V
Continous forward current
T
C
=25°C
T
C
=90°C
Surge non repetitive forward current
28
17
A
T
C
=25°C,
t
p
=10 ms, sine halfwave
Maximum repetitive forward current
I
FSM
63
T
C
=25°C,
t
p
limited by
T
jmax
,
D
=0.5
Power dissipation
I
FRM
42.5
T
C
=25°C
T
C
=90°C
Operating and storage temperature
Soldering temperature
1.6mm(0.063 in.) from case for 10s
P
tot
96
46
W
T
j ,
T
stg
T
S
-55...+150
260
°C
°C
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