- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383099 > IDT10S60C (INFINEON TECHNOLOGIES AG) 2nd Generation thinQ! SiC Schottky Diode PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT10S60C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | 2nd Generation thinQ! SiC Schottky Diode |
| 中文描述： | 第二代thinQ！碳化硅肖特基二極管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 250K |
| 代理商： | IDT10S60C |
IDT10S60C
2
nd
Generation thinQ!
TM
SiC Schottky Diode
Features
Revolutionary semiconductor material - Silicon Carbide
Switching behavior benchmark
No reverse recovery/ No forward recovery
No temperature influence on the switching behavior
High surge current capability
Pb-free lead plating; RoHs compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 5mA
2)
thinQ! 2G Diode specially designed for fast switching applications like:
CCM PFC
Motor Drives
I
F
=5 A,
T
j
=25 °C
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous forward current
I
F
T
C
<140 °C
10
A
RMS forward current
I
F,RMS
f
=50 Hz
15
Surge non-repetitive forward current,
sine halfwave
I
F,SM
T
C
=25 °C,
t
p
=10 ms
84
Repetitive peak forward current
I
F,RM
T
j
=150 °C,
T
C
=100 °C,
D
=0.1
39
Non-repetitive peak forward current
I
F,max
T
C
=25 °C,
t
p
=10 μs
350
i2t value
∫
i
2
d
t
T
C
=25 °C,
t
p
=10 ms
35
A
2
s
Repetitive peak reverse voltage
V
RRM
600
V
Diode ruggedness dv/dt
d
v/
d
t
V
R
=0…480V
50
V/ns
Power dissipation
P
tot
T
C
=25 °C
100
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
Mounting torque
M3 and M3.5 screws
60
Ncm
Value
V
DC
600
V
Q
c
24
nC
I
F
10
A
Product Summary
PG-TO220-2-2
Type
Package
Marking
Pin 1
Pin 2
IDT10S60C
PG-TO220-2-2
D10S60C
C
A
Rev. 2.0
page 1
2006-03-14
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT16S60C | 2nd Generation thinQ! SiC Schottky Diode |
| IDT77010 | Data Path Interface to Utopia Level 1 Translation Device |
| IDT77010L155PQF | Data Path Interface to Utopia Level 1 Translation Device |
| IE-0530HP | Infrared Emitting Diode |
| IEEE 802.11 | () |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT10S60C_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2nd Generation thinQ SiC Schottky Diode |
| IDT10S60CXK | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 10A 2-Pin(2+Tab) TO-220 |
| IDT12S60C | 功能描述:肖特基二極管與整流器 2ND GEN THINQ 600V SiC Schottky Diode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| IDT12S60C_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:2nd Generation thinQ SiC Schottky Diode |
| IDT12S60CXK | 制造商:Infineon Technologies AG 功能描述:Diode Schottky 600V 12A 2-Pin(2+Tab) TO-220 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。
