參數(shù)資料
型號(hào): IDT6178S25PB
廠商: Integrated Device Technology, Inc.
英文描述: CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM
中文描述: 的CMOS StaticRAM 16K的(4K的× 4位)高速緩存標(biāo)記內(nèi)存
文件頁(yè)數(shù): 5/7頁(yè)
文件大小: 72K
代理商: IDT6178S25PB
11.1
5
IDT6178S
CMOS StaticRAM 16K (4K x 4-BIT) CACHE-TAG RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%, All Temperature Ranges)
6178S10
(1)
6178S12
6178S15
6178S20/25
Symbol
Read Cycle
t
RC
t
AA
t
OE
t
OH
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
Address Access Time
Output Enable Access Time
Output Hold from Address Change
10
3
10
7
12
3
12
8
15
3
15
10
20/25
3
ns
ns
ns
ns
20/25
15
t
OLZ
(2)
Output Enable to Output in Low-Z Time
2
2
2
2
ns
t
OHZ
(2)
Output Disable to Output in High-Z Time
6
7
9
12
ns
NOTES:
1. 0
°
C to +70
°
C temperature range only.
2. This parameter guaranteed with AC load (Figure 3) by device characterization, but is not production tested.
2953 tbl 11
TIMING WAVEFORM OF READ CYCLE NO. 2
(1,2)
TIMING WAVEFORM OF READ CYCLE NO. 1
(1)
NOTES:
1.
WE
is HIGH for Read Cycle.
2. Output enable is continuously active,
OE
is LOW.
3. Transition is measured
±
200V from steady state.
OE
ADDRESS
2953 drw 08
t
RC
t
OH
t
AA
DATA
OUT
t
OE
t
OLZ
t
OHZ
DATA
OUT
VALID
(3)
(3)
ADDRESS
2953 drw 09
t
RC
t
OH
t
AA
DATA
OUT
t
OH
PREVIOUS DATA
OUT
VALID
DATA
OUT
VALID
DATA
OUT
VALID
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