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| 型號(hào)： | IDT7015S35PF |
| 廠(chǎng)商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | Quad Low-Power JFET-Input General-Purpose Operational Amplifier 14-TSSOP 0 to 70 |
| 中文描述： | 8K X 9 DUAL-PORT SRAM, 35 ns, PQFP80 |
| 封裝： | TQFP-80 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大小： | 263K |
| 代理商： | IDT7015S35PF |
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IDT7015S/L
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.12
5
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
(V
CC
= 5.0V
±
10%)
7015X12
7015X15
Com'l. Only
7015X17
Com'l. Only
Test Com'l. Only
Condition Version Typ.
(2)
Max. Typ.
(2)
CE
= V
IL
, Outputs Open
MIL.
SEM
= V
IH
f = f
MAX(3)
COM’L.
Symbol
I
CC
Parameter
Max. Typ.
(2)
Max. Unit
—
—
—
—
310
170
260
170
—
—
—
—
60
25
50
25
—
—
—
—
190
105
160
109
—
—
—
—
15
1.0
5
0.2
Dynamic Operating
Current
(Both Ports Active)
S
L
S
L
S
L
S
L
S
L
S
L
S
L
S
L
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
325
275
—
—
70
60
—
—
200
170
—
—
15
5
—
—
170
170
—
—
25
25
—
—
105
105
—
—
1.0
0.2
—
—
310
260
—
—
60
50
—
—
190
160
—
—
15
5
mA
I
SB1
Standby Current
CE
R
=
CE
L
= V
IH
(Both Ports — TTL
SEM
R
=
SEM
L
= V
IH
Level Inputs) f = f
MAX(3)
MIL.
mA
COM’L.
I
SB2
Standby Current
CE
"A"
=V
IL
and
CE
"B"
= V
IH(5)
MIL.
(One Port — TTL Active Port Outputs Open
Level Inputs) f = f
MAX(3)
SEM
R
=
SEM
L
= V
IH
Full Standby Current Both Ports
CE
L
and
(Both Ports — All
CE
R
> V
CC
- 0.2V
CMOS Level Inputs) V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
Full Standby Current
CE
"A"
<
0.2V and
(One Port — All
CE
"B"
> V
CC
- 0.2V
(5)
CMOS Level Inputs)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V
Active Port Outputs Open,
f = f
MAX(3)
mA
COM’L.
I
SB3
MIL.
mA
COM’L.
I
SB4
MIL.
S
L
—
—
—
—
—
—
—
—
—
—
—
—
mA
COM’L.
S
L
100
100
180
150
100
100
170
140
100
100
170
140
mA
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(V
CC
= 5.0V
±
10%)
7015S
7015L
Symbol
|I
LI
|
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
μ
A
μ
A
V
V
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
—
10
—
5
|I
LO
|
V
OL
V
OH
Output Leakage Current
Output Low Voltage
Output High Voltage
CE
= V
IH
, V
OUT
= 0V to V
CC
I
OL
= 4mA
I
OH
= -4mA
—
—
2.4
10
0.4
—
—
—
2.4
5
0.4
—
NOTES:
1. "X" in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. I
CCDC
= 120mA(typ.)
3. At f = f
MAX
,
address and I/O'
S
are cycling at the maximum frequency read cycle of 1/t
RC,
and using “AC Test Conditions” of input levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite of port "A".
2954 tbl 09
NOTE:
1. At Vcc < 2.0V, Input leakages are undefined.
2954 tbl 08
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| IDT7015S35PF8 | 功能描述:IC SRAM 72KBIT 35NS 80TQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步 存儲(chǔ)容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤(pán) 其它名稱(chēng):71V67703S75PFGI |
| IDT7015S35PFB | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM |
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| IDT7016L | 制造商:IDT 制造商全稱(chēng):Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
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