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參數(shù)資料
| 型號： | IDT7016L35G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 35 ns, CPGA68 |
| 封裝： | CERAMIC, PGA-68 |
| 文件頁數(shù)： | 14/20頁 |
| 文件大小： | 262K |
| 代理商： | IDT7016L35G |
6.13
14
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE
(1)
IDT7016X12
Com'l. Only
Min.
IDT7016X15
Com'l. Only
Min
Symbol
INTERRUPT TIMING
t
AS
t
WR
t
INS
t
INR
Parameter
Max.
Max.
Unit
Address Set-up Time
Write Recovery Time
Interrupt Set Time
Interrupt Reset Time
0
0
—
—
—
—
12
12
0
0
—
—
—
—
15
15
ns
ns
ns
ns
WAVEFORM OF BUSY ARBITRATION CONTROLLED BY
CE
TIMING
(M/
S
= V
IH
)
(1)
WAVEFORM OF BUSY ARBITRATION CYCLE CONTROLLED BY ADDRESS MATCH TIMING
(M/
S
= V
IH
)
(1)
3190 drw 15
ADDR
"A"
and
"B"
ADDRESSES MATCH
CE
"A"
CE
"B"
BUSY
"B"
t
APS
t
BAC
t
BDC
(2)
3190 drw 16
ADDR
"A"
ADDRESS "N"
ADDR
"B"
BUSY
"B"
t
APS
t
BAA
t
BDA
(2)
MATCHING ADDRESS "N"
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If t
APS
is not satisfied, the busy signal will be asserted on one side or another but there is no guarantee on which side busy will be asserted.
NOTE:
1. "X" in part numbers indicates power rating (S or L).
2739 tbl 14
IDT7016X20
IDT7016X25
IDT7016X35
Symbol
INTERRUPT TIMING
t
AS
t
WR
t
INS
t
INR
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Address Set-up Time
Write Recovery Time
Interrupt Set Time
Interrupt Reset Time
0
0
—
—
—
—
20
20
0
0
—
—
—
—
20
20
0
0
—
—
—
—
25
25
ns
ns
ns
ns
相關PDF資料 |
PDF描述 |
|---|---|
| IDT7016L35GB | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| IDT7016L35J | Quad Low-Power JFET-Input Operational Amplifier 14-SOIC 0 to 70 |
| IDT7016L35JB | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35PF | Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70 |
| IDT7016L35PFB | Quad Low-Power JFET-Input Operational Amplifier 14-PDIP 0 to 70 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016L35GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35GG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35J | 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應商設備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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