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參數(shù)資料
| 型號： | IDT7016L35G |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 35 ns, CPGA68 |
| 封裝： | CERAMIC, PGA-68 |
| 文件頁數(shù)： | 8/20頁 |
| 文件大?。?/td> | 262K |
| 代理商： | IDT7016L35G |
6.13
8
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
WAVEFORM OF READ CYCLES
(5)
NOTES:
1. Timing depends on which signal is asserted last,
OE
or
CE
.
2. Timing depends on which signal is de-asserted first,
CE
or
OE.
3. t
BDD
delay is required only in cases where the opposite port is completing a write operation to the same address location. For simultaneous read operations
BUSY
has no relation to valid output data.
4. Start of valid data depends on which timing becomes effective last : t
AOE
, t
ACE
, t
AA,
or t
BDD
.
5.
SEM
= V
IH
.
t
RC
R/
W
CE
ADDR
t
AA
t
ACE(4)
OE
3190 drw 07
(4)
t
AOE(4)
(1)
t
LZ
t
OH
(2)
t
HZ
(3, 4)
t
BDD
DATA
OUT
BUSY
OUT
VALID DATA
(4)
TIMING OF POWER-UP / POWER-DOWN
CE
3190 drw 08
t
PU
I
CC
I
SB
t
PD
50%
50%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016L35GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016L35GG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35GGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016L35J | 功能描述:IC SRAM 144KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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