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參數(shù)資料
| 型號： | IDT7016S15GGB |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| 中文描述： | 高速16K的× 9雙端口靜態(tài)RAM |
| 文件頁數(shù)： | 7/20頁 |
| 文件大?。?/td> | 173K |
| 代理商： | IDT7016S15GGB |
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
AC Elec tric al Charac teristic s Over the
Operating Temperature and S upply Voltage Range
(4)
7
APRIL 04, 2006
NOTES:
1. Transition is measured 0mV fromLow- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization but not production tested.
3. To access RAM
CE
= V
IL
and
SEM
= V
IH
. To access semaphore,
CE
= V
IH
and
SEM
= V
IL
.
4. 'X' in part numbers indicates power rating (S or L).
7016X12
Coml Only
7016X15
Coml Only
Unit
Symbol
Parameter
Mn.
Max.
Mn.
Max.
READ CYCLE
t
RC
Read Cycle Time
12
____
15
____
ns
t
AA
Address Access Time
____
12
____
15
ns
t
ACE
Chip Enable Access Time
(3)
____
12
____
15
ns
t
AOE
Output Enable Access Time
____
8
____
10
ns
t
OH
Output Hold fromAddress Change
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
10
____
10
ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
12
____
15
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
10
____
10
____
ns
t
SAA
Semaphore Address Access Time
____
12
____
15
ns
3190 tbl 12a
7016X20
Com'l, Ind
& Mlitary
7016X25
Com'l &
Mlitary
7016X35
Com'l &
Mlitary
Unit
Symbol
Parameter
Min.
Max.
Mn.
Max.
Mn.
Max.
READ CYCLE
t
RC
Read Cycle Time
20
____
25
____
35
____
ns
t
AA
Address Access Time
____
20
____
25
____
35
ns
t
ACE
Chip Enable Access Time
(3)
____
20
____
25
____
35
ns
t
AOE
Output Enable Access Time
____
12
____
13
____
20
ns
t
OH
Output Hold fromAddress Change
3
____
3
____
3
____
ns
t
LZ
Output Low-Z Time
(1,2)
3
____
3
____
3
____
ns
t
HZ
Output High-Z Time
(1,2)
____
12
____
15
____
20
ns
t
PU
Chip Enable to Power Up Time
(2)
0
____
0
____
0
____
ns
t
PD
Chip Disable to Power Down Time
(2)
____
20
____
25
____
35
ns
t
SOP
Semaphore Flag Update Pulse (
OE
or
SEM
)
10
____
10
____
10
____
ns
t
SAA
Semaphore Address Access Time
____
20
____
25
____
35
ns
3190 tbl 12b
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| IDT7016S15GGI | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S15JG | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S15JGB | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S15JGI | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016S15GGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S15J | 功能描述:IC SRAM 144KBIT 15NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7016S15J8 | 功能描述:IC SRAM 144KBIT 15NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:45 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，異步 存儲容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF |
| IDT7016S15JB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S15JG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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