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參數(shù)資料
| 型號： | IDT7016S20PFGB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 20 ns, PQFP80 |
| 封裝： | 14 X 14 MM, 1.4 MM HEIGHT, GREEN, TQFP-80 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大小： | 173K |
| 代理商： | IDT7016S20PFGB |
6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Truth Table I: Non-Contention Read/Write Control
Inputs
(1)
Outputs
APRIL 04, 2006
Recommended DC Operating
Conditions
Maximum Operating
Temperature and Supply Voltage
(1)
Truth Table II: S emaphore Read/Write Control
(1)
Inputs
Absolute Maximum Ratings
(1)
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read fromall I/O
s
(I/O
0
-I/O
8
). These eight semaphores are addressed by A
0
- A
2.
NOTE:
1. Condition: A
0L
— A
13L
≠
A
0R
— A
13R
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximumrating conditions for extended periods may
affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum and is limted to < 20mA for the period of V
TERM
> Vcc + 10%.
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1. V
IL
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 10%.
Mode
CE
R/
W
OE
SEM
I/O
0-8
H
X
X
H
High-Z
Deselcted: Power-Down
L
L
X
H
DATA
IN
Write to Memory
L
H
L
H
DATA
OUT
Read Memory
X
X
H
X
High-Z
Outputs Disabled
3190 tbl 02
Outputs
Mode
CE
R/
W
OE
SEM
I/O
0-8
H
H
L
L
DATA
OUT
Read Semaphore Flag Data Out (I/O
0
- I/O
8
)
H
↑
X
L
DATA
IN
Write I/O
0
into Semaphore Flag
L
X
X
L
____
Not Allowed
3190 tbl 03
Symbol
Rating
Commercial
& Industrial
Mlitary
Unit
V
TERM
(2)
Termnal Voltage
wth Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
T
BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
T
STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
I
OUT
DC Output
Current
50
50
mA
3190 tbl 04
Grade
Ambient
Temperature
GND
Vcc
Mlitary
-55
O
C to +125
O
C
0V
5.0V
+
10%
Commercial
0
O
C to +70
O
C
0V
5.0V
+
10%
Industrial
-40
O
C to +85
O
C
0V
5.0V
+
10%
3190 tbl 05
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
(2)
V
V
IL
Input LowVoltage
-0.5
(1)
____
0.8
V
3190 tbl 06
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016S20PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25G | 功能描述:IC SRAM 144KBIT 25NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7016S25GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S25GG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25GGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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