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| 型號(hào)： | IDT7016S20PFGB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| 中文描述： | 16K X 9 DUAL-PORT SRAM, 20 ns, PQFP80 |
| 封裝： | 14 X 14 MM, 1.4 MM HEIGHT, GREEN, TQFP-80 |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | IDT7016S20PFGB |
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6.42
IDT7016S/L
High-Speed 16K x 9 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
Capacitance
(1)
(T
A
= +25°C, f = 1.0mhz, for T QFP ONLY )
5
APRIL 04, 2006
DC Elec tric al Charac teristic s Over the
Operating Temperature and Supply Voltage Range
(V
CC
= 5.0V ± 10%)
NOTE:
1.
At Vcc < 2.0V, Input leakages are undefined.
NOTES:
1. This parameter is determned by device characteristics but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from0V to 3V or from 3V to 0V .
Output Loads and AC Test
Conditions
Figure 1. AC Output Test Load
Figure 2. Output Test Load
(for t
LZ
, t
HZ
, t
WZ
, t
OW
)
*Including scope and jig.
3190 drw 06
893
30pF
347
5V
DATA
OUT
BUSY
INT
893
5pF*
347
5V
DATA
OUT
,
Symbol
Parameter
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
9
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
10
pF
3190 tbl 07
Symbol
Parameter
Test Conditions
7016S
7016L
Unit
Mn.
Max.
Mn.
Max.
|
LI
|
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
___
10
___
5
μA
|
LO
|
Output Leakage Current
CE
= V
IH
, V
OUT
= 0V to V
CC
___
10
___
5
μA
V
OL
Output Low Voltage
I
OL
= +4mA
___
0.4
___
0.4
V
V
OH
Output High Voltage
I
OH
= -4mA
2.4
___
2.4
___
V
3190 tbl 08
Input Pulse Levels
Input Rise/Fall Times
Input Timng Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1 and 2
3190 tbl 09
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7016S20PFGI | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25G | 功能描述:IC SRAM 144KBIT 25NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7016S25GB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM |
| IDT7016S25GG | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
| IDT7016S25GGB | 制造商:IDT 制造商全稱:Integrated Device Technology 功能描述:HIGH-SPEED 16K X 9 DUAL-PORT STATIC RAM |
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