參數(shù)資料
型號(hào)： IDT7025S15J
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： DRAM
英文描述： Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 0.0035 Ohms @ VGS = 10V, TO-263/D2PAK Package
中文描述： 8K X 16 DUAL-PORT SRAM, 15 ns, PQCC84
封裝： PLASTIC, LCC-84
文件頁數(shù)： 4/20頁
文件大?。?/td> 294K
代理商： IDT7025S15J
6.16
4
IDT7025S/L
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
CAPACITANCE
(1)
(T
A
= +25
°
C, f = 1.0MHz)TQFP ONLY
Symbol
Parameter
C
IN
Input Capacitance
C
OUT
Output
Capacitance
Conditions
(2)
Max.
V
IN
= 3dV
V
OUT
= 3dV
Unit
pF
pF
9
10
NOTES:
1. This parameter is determined by device characterization but is not
production tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V.
2683 tbl 07
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
Commercial
Military
Unit
V
TERM
(2)
Terminal Voltage –0.5 to +7.0
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
DC Output
Current
–0.5 to +7.0
V
T
A
0 to +70
–55 to +125
°
C
T
BIAS
–55 to +125
–65 to +135
°
C
T
STG
–55 to +125
–65 to +150
°
C
I
OUT
50
50
mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2683 tbl 05
2. V
TERM
must not exceed Vcc + 0.5V for more than 25% of the cycle time
or 10ns maximum, and is limited to < 20 mA for the period over V
TERM
> Vcc + 0.5V.
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
(1)
CE
R/
W
OE
UB
LB
H
X
X
X
X
X
X
X
H
H
L
L
X
L
H
L
L
X
H
L
L
L
X
L
L
L
H
L
L
H
L
H
L
H
L
L
H
L
L
L
X
X
H
X
X
Outputs
I/O
8-15
High-Z
High-Z
DATA
IN
High-Z
DATA
IN
DATA
OUT
High-Z
DATA
OUT
DATA
OUT
Read Both Bytes
High-Z
High-Z
SEM
I/O
0-7
High-Z
High-Z
High-Z
DATA
IN
DATA
IN
High-Z
DATA
OUT
Read Lower Byte Only
Mode
H
H
H
H
H
H
H
H
X
Deselected: Power Down
Both Bytes Deselected
Write to Upper Byte Only
Write to Lower Byte Only
Write to Both Bytes
Read Upper Byte Only
Outputs Disabled
NOTE:
1. A
0L
— A
12L
are not equal to A
0R
— A
12R.
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
(1)
Inputs
CE
R/
W
OE
UB
LB
H
H
L
X
X
H
L
H
H
H
u
X
X
X
u
X
H
H
L
X
X
L
L
X
X
X
2683 tbl 03
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
GND
Supply Voltage
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
IH
Input High Voltage
2.2
—
6.0
(2)
V
V
IL
Input Low Voltage
–0.5
(1)
—
0.8
V
NOTES:
1. V
I
L
> -1.5V for pulse width less than 10ns.
2. V
TERM
must not exceed Vcc + 0.5V.
2683 tbl 06
NOTE:
1. There are eight semaphore flags written to via I/O
0
and read from I/O
0
- I/O
15.
These eight semaphores are addressed by A
0
- A
2
.
Outputs
I/O
8-15
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
OUT
DATA
OUT
Read Semaphore Flag Data Out
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
DATA
IN
DATA
IN
Write I/O
0
into Semaphore Flag
—
—
Not Allowed
—
—
Not Allowed
SEM
I/O
0-7
Mode
X
L
L
L
L
L
L
X
X
L
2683 tbl 04
相關(guān)PDF資料
PDF描述
IDT7025S15JB 75V N-Channel PowerTrench MOSFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel
IDT7025S15PF 75V N-Channel PowerTrench MOSFET
IDT7025S15PFB 100V N-Channel PowerTrench MOSFET; Package: TO-263(D2PAK); No of Pins: 3; Container: Tape &amp; Reel
IDT7025S17F Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel
IDT7025S17FB Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7025S15J8 功能描述:IC SRAM 128KBIT 15NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT7025S15PF 功能描述:IC SRAM 128KBIT 15NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?（單線） 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP，8-MSOP（0.118"，3.00mm 寬） 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
IDT7025S15PF8 功能描述:IC SRAM 128KBIT 15NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，異步 存儲(chǔ)容量:128K（8K x 16） 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:70V25S15PF
IDT7025S17G 功能描述:IC SRAM 128KBIT 17NS 84PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT7025S17J 功能描述:IC SRAM 128KBIT 17NS 84PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
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