參數(shù)資料
型號(hào): IDT7027L25PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM
中文描述: 32K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 6/19頁
文件大小: 160K
代理商: IDT7027L25PF
6.42
IDT7027S/L
High-Speed 32K x 16 Dual-Port Static RAM Military, Industrial and Commercial Temperature Ranges
)%68%6
$,/9:+
>
:
02":;<
NOTES:
1. 'X' in part numbers indicates power rating (S or L).
2. V
CC
= 5V, T
A
= +25
°
C, and are not production tested. I
CCDC
= 120mA (Typ.)
3. At f = f
MAX
,
address and control lines (except Output Enable) are cycling at the maximumfrequency read cycle of 1/ t
RC,
and using
AC Test Conditions
of input
levels of GND to 3V.
4. f = 0 means no address or control lines change.
5. Port "A" may be either left or right port. Port "B" is the opposite fromport "A".
6. Refer to Chip Enable Truth Table.
7. Industrial temperature: for other speeds, packages and powers contact your sales office.
7027X20
Coml Only
7027X25
Coml, Ind
& Mlitary
7027X35
Coml &
Mlitary
7027X55
Coml &
Mlitary
Symbol
Parameter
Test Condition
Version
Typ.
(2)
Max.
Typ.
(2)
Max.
Typ.
(2)
Max.
Typ.
(2)
Max.
Unit
I
CC
Dynamc Operating
Current
(Both Ports Active)
CE
= V
IL
, Outputs Disabled
SEM
= V
IH
f = f
MAX
(3)
COML
S
L
185
185
325
285
180
170
305
265
160
160
295
255
150
150
270
230
mA
MIL &
IND
S
L
____
____
____
____
170
170
345
305
160
160
335
295
150
150
310
270
I
SB1
Standby Current
(Both Ports - TTL Level
Inputs)
CE
L
=
CE
= V
IH
SEM
R
=
SEM
L
= V
IH
f = f
MAX
(3)
COML
S
L
55
55
90
70
40
40
85
60
30
30
85
60
20
20
85
60
mA
MIL &
IND
S
L
____
____
____
____
40
40
100
80
30
30
100
80
20
20
100
80
I
SB2
Standby Current
(One Port - TTL Level
Inputs)
CE
"A"
= V
IL
and
CE
"B"
= V
IH
(5)
Active Port Outputs Disabled,
f=f
MAX
(3)
SEM
R
=
SEM
L
= V
IH
COML
S
L
120
120
215
185
105
105
200
170
95
95
185
155
85
85
165
135
mA
MIL &
IND
S
L
____
____
____
____
105
105
230
200
95
95
215
185
85
85
195
165
I
SB3
Full Standby Current
(Both Ports - All CMOS
Level Inputs)
Both Ports
CE
L
and
CE
R
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
< 0.2V, f = 0
(4)
SEM
R
=
SEM
L
> V
CC
- 0.2V
COML
S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
mA
MIL &
IND
S
L
____
____
____
____
1.0
0.2
30
10
1.0
0.2
30
10
1.0
0.2
30
10
I
SB4
Full Standby Current
(One Port - All CMOS
Level Inputs)
CE
"A"
< 0.2V and
CE
"B"
> V
- 0.2V
(5)
SEM
R
=
SEM
L
> V
CC
- 0.2V
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, Active Port Outputs
Disabled, f = f
MAX
(3)
COML
S
L
115
115
190
160
100
100
170
145
90
90
160
135
80
80
135
110
mA
MIL &
IND
S
L
____
____
____
____
100
100
200
175
90
90
190
165
80
80
175
150
3199 tbl 10
相關(guān)PDF資料
PDF描述
IDT7027L25PFB HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM
IDT7027L25PFI HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM
IDT7027L55G HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM
IDT7027L55GB HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM
IDT7027L55GI HIGH-SPEED 32K x 16 DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT7027L25PF8 功能描述:IC SRAM 512KBIT 25NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7027L25PFI 功能描述:IC SRAM 512KBIT 25NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)
IDT7027L35G 功能描述:IC SRAM 512KBIT 35NS 108PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT7027L35PF 功能描述:IC SRAM 512KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT7027L35PF8 功能描述:IC SRAM 512KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8