- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377271 > IDT7052 (Integrated Device Technology, Inc.) HIGH-SPEED 2K x 8 FourPort STATIC RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT7052 |
| 廠商： | Integrated Device Technology, Inc. |
| 英文描述： | HIGH-SPEED 2K x 8 FourPort STATIC RAM |
| 中文描述： | 高速2K × 8 FourPort靜態(tài)RAM |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 131K |
| 代理商： | IDT7052 |
6.42
IDT7052S/L
High-Speed 2K x 8 FourPort Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Write Cycle No. 1, R/
W
Controlled Timing
(5,8)
Timing Waveform of Write Cycle No. 2, CE Controlled Timing
(1, 5)
NOTES:
1. R/
W
or
CE
= V
IH
during all address transitions.
2. A write occurs during the overlap (t
EW
or t
WP
) of a
CE
= V
IL
and a R/
W
= V
IL
.
3. t
WR
is measured fromthe earlier of
CE
or R/
W
= V
IH
to the end of write cycle.
4. During this period, the I/O pins are in the output state, and input signals must not be applied.
5. If the
CE
= V
IL
transition occurs simultaneously with or after the R/
W
= V
IL
transition, the outputs remain in the High-impedance state.
6. Timng depends on which enable signal is asserted last,
CE
or R/
W
.
7. Transition is measured ±200mV fromLow or High-impedance voltage with the Output Test Load (Figure 2). This parameter is guaranteed but is not production
tested.
8. If
OE
= V
IL
during a R/
W
controlled write cycle, the write pulse width must be the larger of t
WP
or (t
WZ
+ t
DW
) to allow the I/O drivers to turn off data to be placed
on the bus for the required t
DW
. If
OE
= V
IH
during an R/
W
controlled write cycle, this requirement does not apply and the write pulse can be as short as the
specified t
WP
.
CE
2674 drw 09
t
AW
t
AS
t
WR
t
DW
DATA
IN
ADDRESS
t
WC
R/
W
t
WP
DATA
OUT
t
WZ
(7)
(4)
(4)
(2)
t
OW
OE
t
HZ
t
LZ
(7)
t
HZ
(6)
(3)
(9)
t
DH
(7)
CE
2674 drw 10
t
AW
t
AS
t
WR
t
DW
DATA
IN
ADDRESS
t
WC
R/
W
t
EW
t
DH
(9)
(6)
(2)
(3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT7052L | HIGH-SPEED 2K x 8 FourPort STATIC RAM |
| IDT7052S | HIGH-SPEED 2K x 8 FourPort STATIC RAM |
| IDT707278S20PF | HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS |
| IDT707278S20PFI | HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS |
| IDT707278S25PF | HIGH-SPEED 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7052L20G | 功能描述:IC SRAM 16KBIT 20NS 108PGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7052L20PF | 功能描述:IC SRAM 16KBIT 20NS 120TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7052L20PF8 | 功能描述:IC SRAM 16KBIT 20NS 120TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7052L20PFG | 功能描述:IC SRAM 16KBIT 20NS 120TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口，同步 存儲(chǔ)容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT7052L20PFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 20NS 120TQFP |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。