參數(shù)資料
型號(hào): IDT70V27S55BF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM
中文描述: 32K X 16 DUAL-PORT SRAM, 55 ns, PBGA144
封裝: 12 X 12 MM, 1.40 MM HEIGHT, FBGA-144
文件頁(yè)數(shù): 19/22頁(yè)
文件大?。?/td> 192K
代理商: IDT70V27S55BF
Commercial and Industrial Temperature Range
an additional 8 address locations dedicated to binary semaphore flags.
These flags allow either processor on the left or right side of the Dual-Port
RAMto claima privilege over the other processor for functions defined by
the systemdesigner
s software. As an example, the semaphore can be
used by one processor to inhibit the other fromaccessing a portion of the
Dual-Port RAMor any other shared resource.
The Dual-Port RAMfeatures a fast access time, and both ports are
completely independent of each other. This means that the activity on the
left port in no way slows the access time of the right port. Both ports are
identical in function to standard CMOS Static RAMand can be read from
or written to, at the same time with the only possible conflict arising fromthe
simultaneous writing of, or a simultaneous READ/WRITE of, a non-
semaphore location. Semaphores are protected against such ambiguous
situations and may be used by the systemprogramto avoid any conflicts
in the non-semaphore portion of the Dual-Port RAM These devices have
an automatic power-down feature controlled by
CE
the Dual-Port RAM
enable, and
SEM
, the semaphore enable. The
CE
and
SEM
pins control
on-chip power down circuitry that permts the respective port to go into
standby mode when not selected. This is the condition which is shown in
Truth Table II where
CE
and
SEM
are both HIGH.
Systems which can best use the IDT70V27 contain multiple processors
or controllers and are typically very high-speed systems which are
software controlled or software intensive. These systems can benefit from
a performance increase offered by the IDT70V27's hardware sema-
phores, which provide a lockout mechanismwithout requiring complex
programmng.
Software handshaking between processors offers the maximumin
systemflexibility by permtting shared resources to be allocated in varying
configurations. The IDT70V27 does not use its semaphore flags to control
any resources through hardware, thus allowing the systemdesigner total
flexibility in systemarchitecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred in
either processor. This can prove to be a major advantage in very high-
speed systems.
IDT 70V27S/L
High-Speed 3.3V 32K x 16 Dual-Port Static RAM
the other side is completed. If a write operation has been attempted from
the side that receives a
BUSY
indication, the write signal is gated internally
to prevent the write fromproceeding.
The use of
BUSY
logic is not required or desirable for all applications.
In some cases it may be useful to logically OR the
BUSY
outputs together
and use any
BUSY
indication as an interrupt source to flag the event of
an illegal or illogical operation. If the write inhibit function of
BUSY
logic is
not desirable, the
BUSY
logic can be disabled by placing the part in slave
mode with the M/
S
pin. Once in slave mode the
BUSY
pin operates solely
as a write inhibit input pin. Normal operation can be programmed by tying
the
BUSY
pins HIGH. If desired, unintended write operations can be
prevented to a port by tying the
BUSY
pin for that port LOW.
The
BUSY
outputs on the IDT 70V27 RAMin master mode, are push-
pull type outputs and do not require pull up resistors to operate. If these
RAMs are being expanded in depth, then the
BUSY
indication for the
resulting array requires the use of an external AND gate.
19
/-(0C(
>.1:;
When expanding an IDT70V27 RAMarray in width while using
BUSY
BUSY
9
Figure 3. Busy and chip enable routing for both width and depth
expansion with IDT70V27 RAMs.
logic, one master part is used to decide which side of the RAMarray
will receive a
BUSY
indication, and to output that indication. Any number
of slaves to be addressed in the same address range as the master, use
the busy signal as a write inhibit signal. Thus on the IDT70V27 RAMthe
BUSY
pin is an output if the part is used as a master (M/
S
pin = V
IH
), and
the
BUSY
pin is an input if the part is used as a slave (M/
S
pin = V
IL
) as
shown in Figure 3.
If two or more master parts were used when expanding in width, a split
decision could result with one master indicating
BUSY
on one side of the
array and another master indicating
BUSY
on one other side of the array.
This would inhibit the write operations fromone port for part of a word and
inhibit the write operations fromthe other port for the other part of the word.
The
BUSY
arbitration, on a master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write. In
a master/slave array, both address and chip enable must be valid long
enough for a
BUSY
flag to be output fromthe master before the actual write
pulse can be initiated with either the R/
W
signal or the byte enables. Failure
to observe this timng can result in a glitched internal write inhibit signal and
corrupted data in the slave.
1(
The IDT70V27 is a fast Dual-Port 32K x 16 CMOS Static RAMwith
EC(1(/
The semaphore logic is a set of eight latches which are independent
of the Dual-Port RAM These latches can be used to pass a flag, or token,
fromone port to the other to indicate that a shared resource is in use. The
semaphores provide a hardware assist for a use assignment method
called
Token Passing Allocation.
In this method, the state of a semaphore
latch is used as a token indicating that shared resource is in use. If the left
processor wants to use this resource, it requests the token by setting the
latch. This processor then verifies its success in setting the latch by reading
it. If it was successful, it proceeds to assume control over the shared
resource. If it was not successful in setting the latch, it determnes that the
right side processor has set the latch first, has the token and is using the
shared resource. The left processor can then either repeatedly request
that semaphore
s status or remove its request for that semaphore to perform
another task and occasionally attempt again to gain control of the token via
the set and test sequence. Once the right side has relinquished the token,
the left side should succeed in gaining control.
The semaphore flags are active low. A token is requested by writing
a zero into a semaphore latch and is released when the same side writes
3603 drw 17
MASTER
Dual Port RAM
BUSY
R
CE
0
MASTER
Dual Port RAM
BUSY
R
SLAVE
Dual Port RAM
BUSY
R
SLAVE
Dual Port RAM
BUSY
R
CE
1
CE
1
CE
0
A
15
BUSY
L
BUSY
L
BUSY
L
BUSY
L
BUSY
L
BUSY
R
相關(guān)PDF資料
PDF描述
IDT70V27S55BFI HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM
IDT70V27S55G HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM
IDT70V27S55GI HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM
IDT70V28L HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM
IDT70V28L15PF HIGH-SPEED 3.3V 64K x 16 DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V27S55PF 功能描述:IC SRAM 512KBIT 55NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V27S55PF8 功能描述:IC SRAM 512KBIT 55NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V28L15PF 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:8K (1K x 8) 速度:400kHz 接口:I²C,2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC(0.154",3.90mm 寬) 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR)
IDT70V28L15PF8 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 雙端口,同步 存儲(chǔ)容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V28L15PFG 功能描述:IC SRAM 1MBIT 15NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,500 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:1K (128 x 8) 速度:100kHz 接口:UNI/O?(單線) 電源電壓:1.8 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-TSSOP,8-MSOP(0.118",3.00mm 寬) 供應(yīng)商設(shè)備封裝:8-MSOP 包裝:帶卷 (TR)