參數(shù)資料
型號: IDT70V9099L9PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
中文描述: 128K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 12/17頁
文件大?。?/td> 300K
代理商: IDT70V9099L9PF
6.42
IDT70V9199/099L
High-Speed 3.3V 128K x9/x8 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of Flow-Through Read-to-Write-to-Read (
OE
= V
IL
)
(3)
12
Timing Waveform of Flow-Through Read-to-Write-to-Read (
OE
Controlled)
(3)
t
CYC1
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
2. Output state (High, Low, or High-impedance) is determined by the previous cycle control signals.
3.
CE
0
and
ADS
= V
IL
; CE
1
,
CNTEN
, and
CNTRST
= V
IH
. "NOP" is "No Operation".
4. Addresses do not have to be accessed sequentially since
ADS
= V
IL
constantly loads the address on the rising edge of the CLK; numbers are for
reference use only.
5. "NOP" is "No Operation." Data in memory at the selected address may be corrupted and should be re-written to guarantee data integrity.
R/
W
ADDRESS
An
An +1
An + 2
An + 2
An + 3
An + 4
DATA
IN
Dn + 2
CE
0
CLK
4859 drw 12
Qn
DATA
OUT
CE
1
t
CD1
Qn + 1
t
CH1
t
CL1
t
CYC1
t
SD
t
HD
t
CD1
t
CD1
t
DC
t
CKHZ
NOP
Qn + 3
(1)
t
CD1
t
DC
t
SC
t
HC
t
SW
t
HW
t
SA
t
HA
READ
READ
t
CKLZ
(4)
(2)
(1)
t
SW
t
HW
WRITE
(5)
R/
W
ADDRESS
An
An +1
An + 2
t
SD
t
HD
An + 3
An + 4
An + 5
(4)
DATA
IN
Dn + 2
CE
0
CLK
4859 drw 13
Qn
DATA
OUT
CE
1
t
CD1
t
CH1
t
CL1
t
CD1
t
DC
Qn + 4
t
CD1
t
DC
t
SC
t
HC
t
SW
t
HW
t
SA
t
HA
READ
WRITE
READ
t
CKLZ
(2)
Dn + 3
t
OHZ
(1)
(1)
t
SW
t
HW
OE
t
OE
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