參數(shù)資料
型號: IDT70V9099L9PF
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: DRAM
英文描述: HIGH-SPEED 3.3V 128K x9/x8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
中文描述: 128K X 8 DUAL-PORT SRAM, 20 ns, PQFP100
封裝: TQFP-100
文件頁數(shù): 2/17頁
文件大?。?/td> 300K
代理商: IDT70V9099L9PF
6.42
IDT70V9199/099L
High-Speed 3.3V 128K x9/x8 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
Description:
The IDT70V9199/099 is a high-speed128K x9/x8 bit synchronous
Dual-Port RAM. The memory array utilizes Dual-Port memory cells to
allow simultaneous access of any address from both ports. Registers on
control, data, and address inputs provide minimal setup and hold times.
The timing latitude provided by this approach allows systems to be
designed with very short cycle times.
Index
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
10099 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 80 79 78 77 76
V
S
GND
NC
FT
/PIPE
R
OE
R
R/
W
R
CNTRST
R
CE
1R
CE
0R
NC
NC
V
SS
NC
A
12R
A
13R
A
14R
A
15R
A
16R
A
11R
A
10R
A
9R
A
8R
A
7R
NC
NC
NC
4859 drw 02
NC
NC
FT
/PIPE
L
OE
L
R/
W
L
CNTRST
L
CE
1L
CE
0L
NC
NC
NC
V
DD
NC
A
14L
A
15L
A
16L
A
13L
A
8L
A
9L
A
7L
NC
NC
A
12L
A
11L
A
10L
I
6
I
5
I
4
I
3
I
2
I
0
I
0
I
1
V
S
I
2
I
4
I
5
I
6
I
7
I
3
I
1
I
7
I
8
I
8
A
6
A
5
A
4
A
3
A
2
A
1
A
0
C
R
C
R
A
R
A
L
C
L
C
L
A
0
A
2
A
3
A
5
A
6
A
1
A
4
N
N
V
D
V
S
V
D
V
S
V
S
N
N
N
70V9199PF
PN100-1
(4)
100-Pin TQFP
Top View
(5)
.
04/02/03
Pin Configuration
(1,2,3)
NOTES:
1. All V
DD
pins must be connected to power supply.
2. All V
SS
pins must be connected to ground supply.
3. Package body is approximately 14mm x 14mm x 1.4mm.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
With an input data register, the IDT70V9199/099 has been optimized
for applications having unidirectional or bidirectional data flow n bursts. An
automatic power down feature, controlled by
CE
0
and CE
1,
permits the
on-chip circuitry of each port to enter a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology, these
devices typically operate on only 500mW of power.
相關(guān)PDF資料
PDF描述
IDT70V9179L6PFI HIGH-SPEED 3.3V 64/32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
IDT70V9279S9PRF HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V9269S9PRF HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V9279S9PRFI HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
IDT70V9269S9PRFI HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IDT70V9099L9PF8 功能描述:IC SRAM 1MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V9099L9PFG 功能描述:IC SRAM 1MBIT 9NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V9099L9PFG8 功能描述:IC SRAM 1MBIT 9NS 100TQFP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V9099L9PFI 功能描述:IC SRAM 1MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8
IDT70V9099L9PFI8 功能描述:IC SRAM 1MBIT 9NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口,同步 存儲容量:1.125M(32K x 36) 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA(17x17) 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8