參數(shù)資料
型號: IDT70V9179L6PFI
廠商: Integrated Device Technology, Inc.
英文描述: HIGH-SPEED 3.3V 64/32K x 9 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
中文描述: 高速3.3 64/32K × 9同步流水線雙端口靜態(tài)RAM
文件頁數(shù): 9/17頁
文件大?。?/td> 305K
代理商: IDT70V9179L6PFI
6.42
IDT70V9189/79L
High-Speed 64/32K x 9 Dual-Port Synchronous Pipelined Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of a Bank Select Pipelined Read
(1,2)
t
CYC2
9
t
SC
t
HC
CE
0(B1)
ADDRESS
(B1)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
CLK
4860 drw 08
Q
0
Q
1
Q
3
DATA
OUT(B1)
t
CH2
t
CL2
(3)
ADDRESS
(B2)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
CE
0(B2)
DATA
OUT(B2)
Q
2
Q
4
t
CD2
t
CD2
t
CKHZ
t
CD2
t
CKLZ
t
DC
t
CKHZ
t
CD2
t
CKLZ
(3)
(3)
t
SC
t
HC
(3)
t
CKHZ
(3)
t
CKLZ
(3)
t
CD2
A
6
A
6
t
DC
t
SC
t
HC
t
SC
t
HC
t
SC
t
HC
CE
0(B1)
ADDRESS
(B1)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
H
A
CLK
4860 drw 08a
D
0
D
3
t
CD1
t
CKLZ
t
CKHZ
(1)
(1)
D
1
DATA
OUT(B1)
t
CH1
t
CL1
t
CYC1
(1)
ADDRESS
(B2)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
CE
0(B2)
DATA
OUT(B2)
D
2
D
4
t
CD1
t
CD1
t
CKHZ
t
DC
t
CD1
t
CKLZ
t
SC
t
HC
(1)
t
CKHZ
(1)
t
CKLZ
(1)
t
CD1
A
6
A
6
t
DC
t
SC
t
HC
t
SC
t
HC
D
5
t
CD1
t
CKLZ
(1)
t
CKHZ
(1)
,
NOTES:
1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT70V9089/79 for this waveform,
and are setup for depth expansion in this example. ADDRESS
(B1)
= ADDRESS
(B2)
in this situation.
2.
OE
and
ADS
= V
IL
; CE
1(B1)
, CE
1(B2)
, R/
W
,
CNTEN
, and
CNTRST
= V
IH
.
3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
4.
CE
0
and
ADS
= V
IL
; CE
1
,
CNTEN
, and
CNTRST
= V
IH
.
5.
OE
= V
IL
for the Right Port, which is being read from.
OE
= V
IH
for the Left Port, which is being written to.
6. If t
CCS
< maximum specified, then data from right port READ is not valid until the maximum specified for t
CWDD
.
If t
CCS
> maximum specified, then data from right port READ is not valid until t
CCS
+ t
CD1
. t
CWDD
does not apply in this case.
Timing Waveform of a Bank Select Flow-Through Read
(6)
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