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參數(shù)資料
| 型號： | IDT70V9279S9PRF |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM |
| 中文描述： | 32K X 16 DUAL-PORT SRAM, 20 ns, PQFP128 |
| 封裝： | 14 X 20 MM, 1.40 MM HEIGHT, TQFP-128 |
| 文件頁數(shù)： | 11/19頁 |
| 文件大?。?/td> | 337K |
| 代理商： | IDT70V9279S9PRF |
6.42
IDT70V9279/69S/L
High-Speed 32/16K x 16 Dual-Port Synchronous Static RAM Industrial and Commercial Temperature Ranges
Timing Waveform of a Bank Select Pipelined Read
(1,2)
t
CYC2
11
t
SC
t
HC
CE
0(B1)
ADDRESS
(B1)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
CLK
3743 drw 08
Q
0
Q
1
Q
3
DATA
OUT(B1)
t
CH2
t
CL2
(3)
ADDRESS
(B2)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
CE
0(B2)
DATA
OUT(B2)
Q
2
Q
4
t
CD2
t
CD2
t
CKHZ
t
CD2
t
CKLZ
t
DC
t
CKHZ
t
CD2
t
CKLZ
(3)
(3)
t
SC
t
HC
(3)
t
CKHZ
(3)
t
CKLZ
(3)
t
CD2
A
6
A
6
t
DC
t
SC
t
HC
t
SC
t
HC
NOTES:
1. B1 Represents Bank #1; B2 Represents Bank #2. Each Bank consists of one IDT70V9279/69 for this waveform, and are setup for depth expansion in this
example. ADDRESS
(B1)
= ADDRESS
(B2)
in this situation.
2.
UB
,
LB
,
OE
, and
ADS
= V
IL
; CE
1(B1)
, CE
1(B2)
, R/
W
,
CNTEN
, and
CNTRST
= V
IH
.
3. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2).
4.
CE
0
,
UB
,
LB
, and
ADS
= V
IL
; CE
1
,
CNTEN
, and
CNTRST
= V
IH
.
5.
OE
= V
IL
for the Right Port, which is being read from.
OE
= V
IH
for the Left Port, which is being written to.
6. If t
CCS
< maximum specified, then data from right port READ is not valid until the maximum specified for t
CWDD
.
If t
CCS
> maximum specified, then data from right port READ is not valid until t
CCS
+ t
CD1
. t
CWDD
does not apply in this case.
Timing Waveform of a Bank Select Flow-Through Read
(6)
t
CYC1
t
SC
t
HC
CE
0(B1)
ADDRESS
(B1)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
CLK
3743 drw 08a
D
0
D
3
t
CD1
t
CKLZ
t
CKHZ
(1)
(1)
D
1
DATA
OUT(B1)
t
CH1
t
CL1
(1)
ADDRESS
(B2)
A
0
A
1
A
2
A
3
A
4
A
5
t
SA
t
HA
CE
0(B2)
DATA
OUT(B2)
D
2
D
4
t
CD1
t
CD1
t
CKHZ
t
DC
t
CD1
t
CKLZ
t
SC
t
HC
(1)
t
CKHZ
(1)
t
CKLZ
(1)
t
CD1
A
6
A
6
t
DC
t
SC
t
HC
t
SC
t
HC
D
5
t
CD1
t
CKLZ
(1)
t
CKHZ
(1)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT70V9279S9PRF8 | 功能描述:IC SRAM 512KBIT 9NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V9279S9PRFI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 512KBIT 9NS 128TQFP |
| IDT70V9279S9PRFI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 512KBIT 9NS 128TQFP |
| IDT70V9289L12PRF | 功能描述:IC SRAM 1MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
| IDT70V9289L12PRF8 | 功能描述:IC SRAM 1MBIT 12NS 128TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 雙端口，同步 存儲容量:1.125M（32K x 36） 速度:5ns 接口:并聯(lián) 電源電壓:3.15 V ~ 3.45 V 工作溫度:-40°C ~ 85°C 封裝/外殼:256-LBGA 供應(yīng)商設(shè)備封裝:256-CABGA（17x17） 包裝:帶卷 (TR) 其它名稱:70V3579S5BCI8 |
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