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參數(shù)資料
| 型號(hào)： | IDT7132LA100C |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
| 中文描述： | 2K X 8 DUAL-PORT SRAM, 100 ns, CDIP48 |
| 封裝： | 0.620 X 2.430 INCH, 0.150 INCH HEIGHT, SIDE BRAZED, DIP-48 |
| 文件頁(yè)數(shù)： | 8/16頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | IDT7132LA100C |
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8
IDT7132SA/LA and IDT 7142SA/LA
High Speed 2K x 8 Dual Port Static RAM Military, Industrial and Commercial Temperature Ranges
Timing Waveform of Read Cycle No. 1, Either Side
(1)
Timing Waveform of Read Cycle No. 2, Either Side
(1)
NOTES:
1.
2.
R/
W
= V
IH,
CE
= V
IL,
and is
OE
= V
IL.
Address is valid prior to the coincidental with
CE
transition LOW.
t
BDD
delay is required only in the case where the opposite port is completing a write operation to the same address location. For simultaneous read operations,
BUSY
has
no relationship to valid output data.
Start of valid data depends on which timing becomes effective last t
AOE
, t
ACE
,
t
AA
, and
t
BDD
.
Timing depends on which signal is asserted last,
OE
or
CE
.
Timing depends on which signal is de-asserted first,
OE
or
CE
.
3.
4.
5.
ADDRESS
DATA
OUT
t
RC
t
OH
PREVIOUS DATA VALID
t
AA
t
OH
DATA VALID
2692 drw 07
t
BDDH
(2,3)
BUSY
OUT
CE
t
HZ
(5)
t
LZ
(4)
t
PD
(3)
VALID DATA
t
PU
50%
OE
DATA
OUT
CURRENT
I
CC
I
SS
50%
2692 drw 08
t
LZ
(4)
t
HZ
(5)
t
ACE
t
AOE
(3)
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| IDT7132LA100CB | HIGH-SPEED 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT7132LA100CB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 100NS SB48 |
| IDT7132LA100J | 功能描述:IC SRAM 16KBIT 100NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132LA100J8 | 功能描述:IC SRAM 16KBIT 100NS 52PLCC RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT7132LA100L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 16KBIT 100NS 48LCC |
| IDT7132LA100P | 功能描述:IC SRAM 16KBIT 100NS 48DIP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
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