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| 型號： | IDT7143SA35J |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| 中文描述： | 2K X 16 DUAL-PORT SRAM, 35 ns, PQCC68 |
| 封裝： | PLASTIC, LCC-68 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 140K |
| 代理商： | IDT7143SA35J |
6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges
%*.5*
.$-123
<!
NOTES:
1. Port-to-port delay through RAMcells fromwriting port to reading port, refer to
“
Timng Waveformof Write with Port-to-Port Read and Busy".
2. t
BDD
is calculated parameter and is greater of 0, t
WDD
- t
WP
(actual) or t
DDD
- t
DW
(actual).
3. To ensure that the earlier of the two ports wins.
4. To ensure that the write cycle is inhibited on port "B" during contention on port "A".
5. To ensure that a write cycle is completed on port "B" after contention on port "A".
6. 'X' in part number indicates power rating (SA or LA).
7133X20
7143X20
Com'l Only
7133X25
7143X25
Coml, Ind
& Military
7133X35
7143X35
Coml, Ind
& Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY
TIMING (For MASTER 71V33)
t
BAA
BUSY
Access Time fromAddress
____
20
____
20
____
30
ns
t
BDA
BUSY
Disable Time fromAddress
____
20
____
20
____
30
ns
t
BAC
BUSY
Access Time fromChip Enable
____
20
____
20
____
25
ns
t
BDC
BUSY
Disable Time fromChip Enable
____
17
____
20
____
25
ns
t
WDD
Write Pulse to Data Delay
(1)
____
40
____
50
____
60
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
30
____
35
____
45
ns
t
BDD
BUSY
Disable to Valid Data
(2)
____
25
____
30
____
35
ns
t
APS
Arbitration Priority Set-up Time
(3)
5
____
5
____
5
____
ns
t
WH
Write Hold After
BUSY
(5)
20
____
20
____
25
____
ns
BUSY
INPUT TIMING (For SLAVE 71V43)
t
WB
BUSY
Input to Write
(4)
0
____
0
____
0
____
ns
t
WH
Write Hold After
BUSY
(5)
20
____
20
____
25
____
ns
t
WDD
Write Pulse to Data Delay
(1)
____
40
____
50
____
60
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
30
____
35
____
45
ns
2746 tbl 12a
7133X45
7143X45
Com'l &
Military
7133X55
7143X55
Coml, Ind
& Military
7133X70/90
7143X70/90
Com'l &
Military
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
BUSY
TIMING (For MASTER 71V33)
t
BAA
BUSY
Access Time fromAddress
____
40
____
40
____
45/45
ns
t
BDA
BUSY
Disable Time fromAddress
____
40
____
40
____
45/45
ns
t
BAC
BUSY
Access Time fromChip Enable
____
30
____
35
____
35/35
ns
t
BDC
BUSY
Disable Time fromChip Enable
____
25
____
30
____
30/30
ns
t
WDD
Write Pulse to Data Delay
(1)
____
80
____
80
____
90/90
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
55
____
55
____
70/70
ns
t
BDD
BUSY
Disable to Valid Data
(2)
____
40
____
40
____
40/40
ns
t
APS
Arbitration Priority Set-up Time
(3)
5
____
5
____
5/5
____
ns
t
WH
Write Hold After
BUSY
(5)
30
____
30
____
30/30
____
ns
BUSY
INPUT TIMING (For SLAVE 71V43)
t
WB
BUSY
Input to Write
(4)
0
____
0
____
0/0
____
ns
t
WH
Write Hold After
BUSY
(5)
30
____
30
____
30/30
____
ns
t
WDD
Write Pulse to Data Delay
(1)
____
80
____
80
____
90/90
ns
t
DDD
Write Data Valid to Read Data Delay
(1)
____
55
____
55
____
70/70
ns
2746 tbl 12b
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| IDT7143SA35J8 | 功能描述:IC SRAM 32KBIT 35NS 68PLCC RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7143SA35PF | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7143SA35PF8 | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:9M（256K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x14） 包裝:托盤 其它名稱:71V67703S75PFGI |
| IDT7143SA55G | 功能描述:IC SRAM 32KBIT 55NS 68PGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:1.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應(yīng)商設(shè)備封裝:8-SOIC 包裝:帶卷 (TR) |
| IDT7143SA55GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS 68PGA |
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