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參數(shù)資料
| 型號： | IDT7187S35L22B |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS STATIC RAM 64K (64K x 1-BIT) |
| 中文描述： | 64K X 1 STANDARD SRAM, 35 ns, CQCC22 |
| 封裝： | LCC-22 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 70K |
| 代理商： | IDT7187S35L22B |
6.2
3
IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT)
MILITARY TEMPERATURE RANGE
CAPACITANCE
(T
A
= +25
°
C, F = 1.0MH
Z
)
Symbol
Parameter
(1)
C
IN
Input Capacitance
C
OUT
Output Capacitance
NOTE:
1. This parameter is determined by device characterization, but is not
production tested.
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
8
8
Unit
pF
pF
2986 tbl 04
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
V
CC
Supply Voltage
G
ND
Supply Voltage
V
IH
Input High Voltage
V
IL
Input Low Voltage
NOTE:
1. V
IL
(min.) = –3.0V for pulse width less than 20ns, once per cycle.
Min.
4.5
0
2.2
–0.5
(1)
Typ.
5.0
0
—
—
Max.
5.5
0
6.0
0.8
Unit
V
V
V
V
2986 tbl 05
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade
Temperature
Military
–55
°
C to +125
°
C
Commercial
0
°
C to +70
°
C
GND
0V
0V
V
CC
5V
±
10%
5V
±
10%
2986 tbl 06
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
V
TERM
Terminal Voltage
with Respect
to GND
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
P
T
Power Dissipation
I
OUT
DC Output
Current
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Com’l.
–0.5 to +7.0 –0.5 to +7.0
Mil.
Unit
V
0 to +70
–55 to +125
°
C
–55 to +125 –65 to +135
°
C
–55 to +125 –65 to +150
°
C
1.0
50
1.0
50
W
mA
2986 tbl 03
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 5.0V
±
10%)
IDT7187S
Min.
—
—
—
—
IDT7187L
Min.
—
—
—
—
—
—
2.4
Symbol
|I
LI
|
Parameter
Test Condition
Max.
10
5
10
5
0.5
0.4
—
Max.
5
2
5
2
0.5
0.4
—
Unit
μ
A
Input Leakage Current
V
CC
= Max.,
V
IN
= GND to V
CC
V
CC
= Max.,
CS
= V
IH
,
V
OUT
= GND to V
CC
I
OL
= 10mA, V
CC
= Min.
I
OL
= 8mA, V
CC
= Min.
I
OH
= –4mA, V
CC
= Min.
MIL.
COM’L.
MIL.
COM’L.
|I
LO
|
Output Leakage Current
μ
A
V
OL
Output Low Voltage
V
—
2.4
V
OH
Output High Voltage
V
2986 tbl 07
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PDF描述 |
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| IDT7188L85DB | CMOS STATIC RAM 64K 16K x 4-BIT |
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相關(guān)代理商/技術(shù)參數(shù) |
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| IDT7187S45CB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 64Kx1, 22 Pin, Ceramic, DIP |
| IDT7187S45DB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 64Kx1, 22 Pin, Ceramic, DIP |
| IDT7187S45PI | 制造商:Integrated Device Technology Inc 功能描述:7187S45PI |
| IDT7187S85CB | 制造商:Integrated Device Technology Inc 功能描述:Static RAM, 64Kx1, 22 Pin, Ceramic, DIP |
| IDT7188 | 制造商:Integrated Device Technology Inc 功能描述: 制造商:IDTQ 功能描述: |
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