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參數(shù)資料
| 型號(hào)： | IDT7188S35DB |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS STATIC RAM 64K 16K x 4-BIT |
| 中文描述： | 16K X 4 STANDARD SRAM, 35 ns, CDIP22 |
| 封裝： | 0.300 INCH, CERAMIC, DIP-22 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | IDT7188S35DB |
6.42
IDT7188S/L
CMOS Static RAM 64K (16K x 4-Bit) Military Temperature Range
3
DC Electrical Characteristics
(V
CC
= 5.0V ± 10%)
DC Electrical Characteristics
(1)
(V
CC
= 5V ± 10%, V
LC
= 0.2V, V
HC
= V
CC
- 0.2V)
Symbol
Parameter
Test Conditions
IDT7188S
IDT7188L
Unit
Mn.
Max.
Mn.
Max.
|
LI
|
Input Leakage Current
V
CC
= Max., V
IN
=
GND to V
CC
____
10
____
5
μA
|
LO
|
Output Leakage Current
V
CC
= Max.,
CS
= V
IH
, V
OUT
= GND to V
CC
____
10
____
5
μA
V
OL
Output LowVoltage
I
OL
= 10mA, V
CC
= Min.
____
0.5
____
0.5
V
I
OL
= 8mA, V
CC
= Min.
____
0.4
____
0.4
V
OH
Output High Voltage
I
OH
= -4mA, V
CC
= Min.
2.4
____
2.4
____
V
2989 tbl 07
NOTES:
1. All values are maximumguaranteed values.
2. At f = f
MAX
address and data inputs are cycling at the maximumfrequency of read cycles of 1/t
RC
. f = 0 means no input lines change.
Symbol
Parameter
Power
7188S25
7188L25
7188S35
7188L35
7188S45
7188L45
7188S55
7188L55
7188S70
7188L70
7188S85
7188L85
Unit
I
CC1
Operating Power
Supply Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f
=
0
(2)
S
105
105
105
105
105
105
mA
L
80
80
80
80
80
80
I
CC2
Dynamc Operating Current
CS
= V
IL
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
S
155
140
140
140
140
140
mA
L
120
115
110
110
110
105
I
SB
Standby Power Supply
Current (TTL Level)
CS
> V
IH
, Outputs Open
V
CC
= Max., f = f
MAX
(2)
S
60
50
50
50
50
50
mA
L
40
40
35
35
35
35
I
SB1
Full Standby Power
Supply Current (CMOS Level)
CS
> V
HC
, V
CC
= Max., V
IN
> V
HC
or V
IN
< V
LC
, f = 0
(2)
S
20
20
20
20
20
20
mA
L
1.5
1.5
1.5
1.5
1.5
1.5
2989 tbl 08
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|---|---|
| IDT7188S35P | 制造商:Integrated Device Technology Inc 功能描述: |
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