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參數(shù)資料
| 型號： | IDT71V124SA20YI |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout |
| 中文描述： | 128K X 8 STANDARD SRAM, 20 ns, PDSO32 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-32 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | IDT71V124SA20YI |
1
2003- Integrated Device Technology, Inc.
NOVEMBER 2003
DSC-3873/07
Features
N
128K x 8 advanced high-speed CMOS static RAM
N
JEDEC revolutionary pinout (center power/GND) for
reduced noise
N
Equal access and cycle times
– Commercial: 10/12/15/20ns
– Industrial: 10/12/15/20ns
N
One Chip Select plus one Output Enable pin
N
Inputs and outputs are LVTTL-compatible
N
Single 3.3V supply
N
Low power consumption via chip deselect
N
Available in a 32-pin 300- and 400-mil Plastic SOJ, and
32-pin Type II TSOP packages.
Functional Block Diagram
Description
The IDT71V124 is a 1,048,576-bit high-speed static RAMorganized
as 128K x 8. It is fabricated using IDT’s high-performance, high-reliability
CMOS technology. This state-of-the-art technology, combined with inno-
vative circuit design techniques, provides a cost-effective solution for high-
speed memory needs. The JEDEC center power/GND pinout reduces
noise generation and improves systemperformance.
The IDT71V124 has an output enable pin which operates as fast as
5ns, with address access times as fast as 9ns available. All bidirec-
tional inputs and outputs of the IDT71V124 are LVTTL-compatible and
operation is froma single 3.3V supply. Fully static asynchronous
circuitry is used; no clocks or refreshes are required for operation.
ADDRESS
DECODER
1,048,576-BIT
MEMORY ARRAY
I/O CONTROL
A
0
A
16
3873 drw 01
8
8
I/O
0
- I/O
7
8
CONTROL
LOGIC
WE
OE
CS
.
3.3V CMOS Static RAM
1 Meg (128K x 8-Bit)
Center Power &
Ground Pinout
IDT71V124SA
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PDF描述 |
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| IDT71V124SA10TYI | 240 x 320 pixel format (portrait mode), Compact LCD size |
| IDT71V124SA12TYI | 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout |
| IDT71V124SA12Y | 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout |
| IDT71V124SA | 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout |
| IDT71V124SA10 | 3.3V CMOS Static RAM 1 Meg (128K x 8-Bit) Center Power & Ground Pinout |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71V124SA20YI8 | 功能描述:IC SRAM 1MBIT 20NS 32SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 產(chǎn)品變化通告:Product Discontinuation 05/Nov/2008 標(biāo)準(zhǔn)包裝:84 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 ZBT 存儲容量:4.5M（128K x 36） 速度:75ns 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:-40°C ~ 85°C 封裝/外殼:119-BGA 供應(yīng)商設(shè)備封裝:119-PBGA（14x22） 包裝:托盤 其它名稱:71V3557SA75BGI |
| IDT71V2546S100BG | 功能描述:IC SRAM 4MBIT 100MHZ 119BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V2546S100BG8 | 功能描述:IC SRAM 4MBIT 100MHZ 119BGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
| IDT71V2546S100BGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 100MHZ 119BGA |
| IDT71V2546S100BGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 100MHZ 119BGA |
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