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參數(shù)資料
| 型號： | IDT71V2577SA85PF |
| 廠商： | Integrated Device Technology, Inc. |
| 元件分類： | 通用總線功能 |
| 英文描述： | 128K x 36,256K x 18 3.3V Synchronous SRAMs 2.5V I/O,Flow-Through Outputs Burst Counter,Single Cycle Deselect |
| 中文描述： | 128K的x 36256畝× 18 3.3同步SRAM的2.5VI / O的流量通過輸出脈沖計(jì)數(shù)器，單周期取消 |
| 文件頁數(shù)： | 4/22頁 |
| 文件大?。?/td> | 304K |
| 代理商： | IDT71V2577SA85PF |
6.42
IDT71V2577, IDT71V2579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
2.5V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
100 Pin TQFP Capacitance
(T
A
= +25°C, f = 1.0MHz)
Parameter
(1)
Recommended DC Operating
Conditions
Recommended Operating
Temperature and Supply Voltage
Absolute Maximum Ratings
(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
DD
termnals only.
3. V
DDQ
termnals only.
4. Input termnals only.
5. I/O termnals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed V
DDQ
during power supply ramp up.
7. TA is the “instant on” case temperature.
NOTES:
1. V
IH
(max) = V
DDQ
+ 1.0V for pulse width less than t
CYC/2
, once per cycle.
2. V
IL
(mn) = -1.0V for pulse width less than t
CYC/2
, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commerical &
Industrial Values
Unit
V
TERM
(2)
Termnal Voltage with
Respect to GND
-0.5 to +4.6
V
V
TERM
(3,6)
Termnal Voltage with
Respect to GND
-0.5 to V
DD
V
V
TERM
(4,6)
Termnal Voltage with
Respect to GND
-0.5 to V
DD
+0.5
V
V
TERM
(5,6)
Termnal Voltage with
Respect to GND
-0.5 to V
DDQ
+0.5
V
T
A
(7)
Commercial
Operating Temperature
-0 to +70
o
C
Industrial
Operating Temperature
-40 to +85
o
C
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-55 to +125
o
C
P
T
Power Dissipation
2.0
W
I
OUT
DC Output Current
50
mA
4877 tbl 03
Grade
Temperature
(1)
V
SS
V
DD
V
DDQ
Commercial
0°C to +70°C
0V
3.3V±5%
2.5V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
2.5V±5%
4877 tbl 04
Symbol
Parameter
Mn.
Typ.
Max.
Unit
V
DD
Core Supply Voltage
3.135
3.3
3.465
V
V
DDQ
I/O Supply Voltage
2.375
2.5
2.625
V
V
SS
Supply Voltage
0
0
0
V
V
IH
Input High Voltage - Inputs
1.7
____
V
DD
+ 0.3
V
V
IH
Input High Voltage - I/O
1.7
____
V
DDQ
+ 0.3
(1)
V
V
IL
Input LowVoltage
-0.3
(2)
____
0.7
V
4877 tbl 05
Symbol
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
5
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
4877 tbl 07
119 BGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Parameter
(1)
Symbol
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
7
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
4877 tbl 07a
NOTES:
1. TA is the “instant on” case temperature.
165 fBGA Capacitance
(T
A
= +25°C, f = 1.0MHz)
Parameter
(1)
Symbol
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
7
pF
C
I/O
I/O Capacitance
V
OUT
= 3dV
7
pF
4877 tbl 07b
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