- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224008 > IDT71V3579YS75B (INTEGRATED DEVICE TECHNOLOGY INC) 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 PDF資料下載
參數(shù)資料
| 型號(hào)： | IDT71V3579YS75B |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 256K X 18 CACHE SRAM, 7.5 ns, PBGA119 |
| 封裝： | BGA-119 |
| 文件頁數(shù)： | 2/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | IDT71V3579YS75B |
6.42
10
IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Synchronous Truth Table (1,3)
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2.
OE is an asynchronous input.
3. ZZ - low for the table.
Operation
Address
Used
CE
CS0
CS1
ADSP
ADSC
ADV
GW
BWE
BWx
OE(2)
CLK
I/O
Deselected Cycle, Power Down
None
H
X
L
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
X
H
L
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
X
L
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
X
H
X
L
X
↑
HI-Z
Deselected Cycle, Power Down
None
L
X
L
X
↑
HI-Z
Read Cycle, Begin Burst
External
L
H
L
X
L
↑
DOUT
Read Cycle, Begin Burst
External
L
H
L
X
H
↑
HI-Z
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
X
L
↑
DOUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
L
↑
DOUT
Read Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
H
↑
HI-Z
Write Cycle, Begin Burst
External
L
H
L
H
L
X
H
L
X
↑
DIN
Write Cycle, Begin Burst
External
L
H
L
H
L
X
L
X
↑
DIN
Read Cycle, Continue Burst
Next
X
H
L
H
X
L
↑
DOUT
Read Cycle, Continue Burst
Next
X
H
L
H
X
H
↑
HI-Z
Read Cycle, Continue Burst
Next
X
H
L
H
X
H
L
↑
DOUT
Read Cycle, Continue Burst
Next
X
H
L
H
X
H
↑
HI-Z
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
L
↑
DOUT
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
H
↑
HI-Z
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
H
L
↑
DOUT
Read Cycle, Continue Burst
Next
H
X
H
L
H
X
H
↑
HI-Z
Write Cycle, Continue Burst
Next
X
H
L
H
L
X
↑
DIN
Write Cycle, Continue Burst
Next
X
H
L
X
↑
DIN
Write Cycle, Continue Burst
Next
H
X
H
L
H
L
X
↑
DIN
Write Cycle, Continue Burst
Next
H
X
H
L
X
↑
DIN
Read Cycle, Suspend Burst
Current
X
H
X
L
↑
DOUT
Read Cycle, Suspend Burst
Current
X
H
X
H
↑
HI-Z
Read Cycle, Suspend Burst
Current
X
H
X
H
L
↑
DOUT
Read Cycle, Suspend Burst
Current
X
H
X
H
↑
HI-Z
Read Cycle, Suspend Burst
Current
H
X
H
X
L
↑
DOUT
Read Cycle, Suspend Burst
Current
H
X
H
X
H
↑
HI-Z
Read Cycle, Suspend Burst
Current
H
X
H
X
H
L
↑
DOUT
Read Cycle, Suspend Burst
Current
H
X
H
X
H
↑
HI-Z
Write Cycle, Suspend Burst
Current
X
H
L
X
↑
DIN
Write Cycle, Suspend Burst
Current
X
H
L
X
↑
DIN
Write Cycle, Suspend Burst
Current
H
X
H
L
X
↑
DIN
Write Cycle, Suspend Burst
Current
H
X
H
L
X
↑
DIN
6450 tbl 11
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT72213L12SO8 | 512 X 1 OTHER FIFO, PDSO24 |
| IDT72291L10PFG8 | 128K X 9 OTHER FIFO, 6.5 ns, PQFP64 |
| IDT74ALVCHR162245PV8 | ALVC/VCX/A SERIES, DUAL 8-BIT TRANSCEIVER, TRUE OUTPUT, PDSO48 |
| IDT74CBTLV16210PA8 | CBTLV/3B SERIES, DUAL 10-BIT DRIVER, TRUE OUTPUT, PDSO48 |
| IDT74FCT163344CPF8 | FCT SERIES, QUAD 2-BIT DRIVER, TRUE OUTPUT, PDSO56 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71V3579YS85PF | 功能描述:IC SRAM 4MBIT 85NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| IDT71V3579YS85PF8 | 功能描述:IC SRAM 4MBIT 85NS 100TQFP RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類型:閃存 - NAND 存儲(chǔ)容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| IDT71V416L10BE | 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:否 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步 存儲(chǔ)容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
| IDT71V416L10BE8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4MBIT 10NS 48CABGA |
| IDT71V416L10BEG | 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 異步 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。