參數(shù)資料
型號: IDT71V3579YS75B
廠商: INTEGRATED DEVICE TECHNOLOGY INC
元件分類: SRAM
英文描述: 256K X 18 CACHE SRAM, 7.5 ns, PBGA119
封裝: BGA-119
文件頁數(shù): 6/22頁
文件大小: 621K
代理商: IDT71V3579YS75B
6.42
14
IDT71V3577YS_79YS, IDT71V3577YSA_79YSA, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
O
1
(A
z
)
C
L
K
A
D
S
P
A
D
R
E
S
G
W
A
D
V
O
E
D
A
T
A
O
U
T
tC
Y
C
tC
H
tC
L
tH
A
tS
W
tH
W
tC
L
Z
A
x
A
y
A
z
tH
S
I1
(A
y
)
tS
D
tH
D
tO
L
Z
tC
D
tC
D
C
D
A
T
A
IN
(2
)
tO
E
O
1
(A
z
)
S
in
g
le
R
e
a
d
F
lo
w
-t
h
ro
u
g
h
B
u
rs
t
R
e
a
d
W
ri
te
tO
H
Z
tS
S
tS
A
O
3
(A
z
)
O
2
(A
z
)
O
4
(A
z
)
O
1
(A
x
)
6
4
5
0
d
rw
0
7
tC
D
,
NOTES:
1
.
Device
is
selected
through
entire
cycle;
CE
and
CS
1are
LOW,
CS
0is
HIGH.
2
.
ZZ
input
is
LOW
and
LBO
is
Don't
Care
for
this
cycle.
3.
O1
(Ax)
represents
the
first
output
from
the
external
address
Ax.
I1
(Ay)
represents
the
first
input
from
the
external
addre
ss
Ay;
O1
(Az)
represents
the
first
output
from
the
external
address
Az;
O2
(Az)
represents
the
next
output
data
in
the
burst
sequence
of
the
base
address
Az,
etc.
where
A0
and
A1
are
advancing
for
the
four
word
burst
i
nthe
sequence
defined
by
the
state
of
the
LBO
input.
Timing Waveform of Combined Flow-Through Read and Write Cycles (1,2,3)
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