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參數(shù)資料
| 型號： | IDT71V3579YSA75BQG |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect |
| 中文描述： | 256K X 18 CACHE SRAM, 7.5 ns, PBGA165 |
| 封裝： | FBGA-165 |
| 文件頁數(shù)： | 22/22頁 |
| 文件大?。?/td> | 521K |
| 代理商： | IDT71V3579YSA75BQG |
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IDT71V3577, IDT71V3579, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Flow-Through Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Datasheet Document History
CORPORATE HEADQUARTERS
2975 Stender Way
Santa Clara, CA 95054
for SALES:
800-345-7015 or 408-727-6116
fax: 408-492-8674
www.idt.com
for Tech Support:
sramhelp@idt.com
800-544-7726, x4033
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
7/23/99
9/17/99
Updated to new format
Revised I/O pin description
Revised block diagramfor flow-through functionality
Revised I
SB1
and I
ZZ
for speeds 7.5 to 8.5ns
Added 119-lead BGA package diagram
Added Datasheet Document History
Added Industrial Temperature range offerings
Added 100pinTQFP Package DiagramOutline
Add capacitance table for BGA package; add Industrial temperature to table; Insert note to
Absolute Max Ratings and Recommended Operating Temperature tables
Add new package offering, 13 x 15mm165 fBGA
Correct 119BGA Package DiagramOutline
Add note reference to BG119 pinout
Add DNU reference note to BQ165 pinout
Update BG119 Package DiagramOutline Dimensions
Remove Prelimnary status
Add reference note to pin N5 on BQ165 pinout, reserved for JTAG
TRST
Updated 165 BGA table information fromTBD to 7
Updated datasheet with JTAG information
Removed note for NC pins (38,39(PF package); L4, U4 (BG package) H2, N7 (BQ package))
requiring NC or connection to Vss.
Added two pages of JTAG Specification, AC Electrical, Definitions and Instructions
Removed old package information fromthe datasheet
Updated ordering information with JTAG and Y stepping information. Added information
regarding packages available IDT website.
Addedd "restricted hazardous substance device" to ordering information.
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12/31/99
04/03/00
06/01/00
Pg. 20
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07/15/00
10/25/00
Pg.8
Pg.4
Pg. 1,2,3,5-9
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04/22/03
06/30/03
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02/18/05
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IDT71V3579YSA75BQGI | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect |
| IDT71V3579YSA75PFGI | 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect |
| IDT71V416S10BEG | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
| IDT71V416S10BEGI | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
| IDT71V416S10PHG | 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IDT71V416L10BE | 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
| IDT71V416L10BE8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4MBIT 10NS 48CABGA |
| IDT71V416L10BEG | 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:2,000 系列:MoBL® 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并聯(lián) 電源電壓:2.2 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-VFBGA 供應(yīng)商設(shè)備封裝:48-VFBGA（6x8） 包裝:帶卷 (TR) |
| IDT71V416L10BEG8 | 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:72 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步 存儲容量:4.5M（256K x 18） 速度:133MHz 接口:并聯(lián) 電源電壓:3.135 V ~ 3.465 V 工作溫度:0°C ~ 70°C 封裝/外殼:100-LQFP 供應(yīng)商設(shè)備封裝:100-TQFP（14x20） 包裝:托盤 |
| IDT71V416L10BEGI | 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯(lián) 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
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