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參數(shù)資料
| 型號： | IDT72105L50SO |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | CMOS PARALLEL-TO-SERIAL FIFO 256 x 16, 512 x 16, 1024 x 16 |
| 中文描述： | 256 X 16 OTHER FIFO, 50 ns, PDSO28 |
| 封裝： | SOIC-28 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 179K |
| 代理商： | IDT72105L50SO |
5.35
3
COMMERCIAL TEMPERATURE RANGE
IDT72105, IDT72115, IDT72125,
256 x 16, 512 x 16, 1024 x 16 PARALLEL-TO-SERIAL CMOS FIFO
Number of Words in FIFO
IDT72115
0
IDT72105
0
IDT72125
0
FF
AEF
HF
EF
H
L
H
L
1–31
32–128
129–224
1–63
64–256
257–448
1–127
128–512
513–896
H
H
H
L
H
H
H
H
L
H
H
H
225–255
256
449–511
512
897–1023
1024
H
L
L
L
L
L
H
H
2665 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
Rating
V
TERM
Terminal Voltage
with Respect to
GND
T
A
Operating
Temperature
T
BIAS
Temperature
Under Bias
T
STG
Storage
Temperature
I
OUT
DC Output
Current
RECOMMENDED DC OPERATING
CONDITIONS
DC ELECTRICAL CHARACTERISTICS
(Commercial V
CC
= 5.0V
±
10%, T
A
= 0
°
C to +70
°
C)
NOTE:
1. 1.5V undershoots are allowed for 10ns once per cycle.
2665 tbl 04
NOTES:
1. Measurements with 0.4V
≤
V
IN
≤
V
CC.
2. SOCP = V
IL
, 0.4
≤
V
OUT
≤
V
CC
.
3. I
CC
measurements are made with outputs open.
4.
RS
=
FL
/DIR =
W
= V
CC
- 0.2V; SOCP = 0.2V; all other inputs
≥
V
CC
- 0.2 or
≤
0.2V.
5. For SO, I
OUT
= -4mA.
6. For SO, I
OUT
= 16mA.
7. Measurements are made after reset.
2665 tbl 05
STATUS FLAGS
Commercial
–0.5 to + 7.0
Unit
V
0 to +70
°
C
–55 to +125
°
C
–55 to + 125
°
C
50
mA
Symbol
I
IL(1)
I
OL(2)
Parameter
IDT72105/IDT72115/ IDT72125
Commercial
Min. Typ. Max.
–1
Unit
μ
A
μ
A
V
V
Input Leakage Current (Any Input)
—
1
Output Leakage Current
Output Logic "1" Voltage I
OUT
= –2mA
(5)
Output Logic "0" Voltage I
OUT
= 8mA
(6)
–10
—
10
V
OH
V
OL
I
CC1 (3)
I
CC2 (3)
2.4
—
—
—
—
0.4
Power Supply Current
—
50
100
mA
Average Standby Current
(
W
=
RS
=
FL
/DIR = V
IH
)(SOCP = V
IL
)
—
4
8
mA
I
CC3 (3,4,7)
Power Down Current
—
1
6
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2665 tbl 03
Symbol
V
CC
GND
Parameter
Supply Voltage
Supply Voltage
Min.
4.5
0
Typ.
5.0
0
Max.
5.5
0
Unit
V
V
V
IH
V
IL(1)
Input High Voltage
Input Low Voltage
2.0
—
—
—
—
0.8
V
V
相關PDF資料 |
PDF描述 |
|---|---|
| IDT72115L50SO | CMOS PARALLEL-TO-SERIAL FIFO 256 x 16, 512 x 16, 1024 x 16 |
| IDT72125L50SO | CMOS PARALLEL-TO-SERIAL FIFO 256 x 16, 512 x 16, 1024 x 16 |
| IDT72105L50TP | CMOS PARALLEL-TO-SERIAL FIFO 256 x 16, 512 x 16, 1024 x 16 |
| IDT72115L50TP | CMOS PARALLEL-TO-SERIAL FIFO 256 x 16, 512 x 16, 1024 x 16 |
| IDT72125L50TP | CMOS PARALLEL-TO-SERIAL FIFO 256 x 16, 512 x 16, 1024 x 16 |
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