IDT72V801/72V8211/72V821/72V831/72V841/72V851 3.3V DUAL CMOS SyncFIFOTM DUAL 256 x 9, DUAL 512 x 9, D" />
參數(shù)資料
型號: IDT72V811L10TF
廠商: IDT, Integrated Device Technology Inc
文件頁數(shù): 11/16頁
文件大小: 0K
描述: IC FIFO SYNC 512X9 10NS 64QFP
標(biāo)準(zhǔn)包裝: 80
系列: 72V
功能: 異步
存儲容量: 4.6K(512 x 9)
數(shù)據(jù)速率: 100MHz
訪問時間: 10ns
電源電壓: 3 V ~ 3.6 V
工作溫度: 0°C ~ 70°C
安裝類型: 表面貼裝
封裝/外殼: 64-LQFP
供應(yīng)商設(shè)備封裝: 64-TQFP(10x10)
包裝: 托盤
其它名稱: 72V811L10TF
4
IDT72V801/72V8211/72V821/72V831/72V841/72V851 3.3V DUAL CMOS SyncFIFOTM
DUAL 256 x 9, DUAL 512 x 9, DUAL 1K x 9, DUAL 2K x 9, DUAL 4K x 9, DUAL 8K x 9
COMMERCIAL AND INDUSTRIAL
TEMPERATURE RANGES
OCTOBER 22, 2008
Symbol
Rating
Commercial
Unit
VTERM
Terminal Voltage with
–0.5 to +5
V
Respect to GND
TSTG
StorageTemperature
–55 to +125
°C
IOUT
DC Output Current
–50 to +50
mA
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of the specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
RECOMMENDEDOPERATING
CONDITIONS
VCC
Supply Voltage(Com’l & Ind’l)
3.0
3.3
3.6
V
GND
Supply Voltage(Com’l & Ind’l)
0
V
VIH
Input High Voltage
(Com’l & Ind’l)
2.0
5.0
V
VIL
Input Low Voltage
(Com’l & Ind’l)
0.8
V
TA
OperatingTemperature
0
70
°C
Commercial
TA
OperatingTemperature
-40
85
°C
Industrial
IDT72V801
IDT72V811
IDT72V821
IDT72V831
IDT72V841
IDT72V851
Commercial and Industrial (1)
tCLK = 10, 15, 20 ns
Symbol
Parameter
Min.
Typ.
Max.
Unit
ILI(2)
Input Leakage Current (Any Input)
–1
–1
A
ILO
(3)
Output Leakage Current
–10
10
A
VOH
Output Logic “1” Voltage, IOH = –2 mA
2.4
V
VOL
Output Logic “0” Voltage, IOL = 8 mA
0.4
V
ICC1
(4,5,6)
Active Power Supply Current (both FIFOs)
40
mA
ICC2
(3,7)
Standby Current
10
mA
NOTES:
1. Industrial temperature range product for the 15ns speed grade is available as a standard device.
2. Measurements with 0.4
≤ VIN ≤ VCC.
3. OEA, OEB
≥ VIH, 0.4 ≤ VOUT ≤ VCC.
4. Tested with outputs disabled (IOUT = 0).
5. RCLK and WCLK toggle at 20 MHz and data inputs switch at 10 MHz.
6. Typical ICC1 = 2[0.17 + 0.48*fS + 0.02*CL*fS] (in mA).
These equations are valid under the following conditions:
VCC = 3.3V, TA = 25°C, fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching at fS/2, CL = capacitive load (in pF).
7. All Inputs = VCC - 0.2V or GND + 0.2V, except RCLK and WCLK, which toggle at 20 MHz.
DC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 3.3V ± 0.3V, TA = 0
°C to +70°C; Industrial :VCC = 3.3V ± 0.3V, TA = -40°C to +85°C)
Symbol
Parameter
Conditions
Max.
Unit
CIN(2)
Input Capacitance
VIN = 0V
10
pF
COUT(1,2)
Output Capacitance
VOUT = 0V
10
pF
NOTE:
1. With output deselected (
OEA, OEB
≥ VIH).
2. Characterized values, not currently tested.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Min
Typ.
Max
Unit
CAPACITANCE (TA= +25°C, f = 1.0MHz)
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