參數(shù)資料
型號： IKW03N120H2
廠商： INFINEON TECHNOLOGIES AG
英文描述： HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
中文描述： 高速2技術與軟，恢復快反平行何快恢復二極管
文件頁數(shù)： 14/15頁
文件大小： 431K
代理商： IKW03N120H2
IKP03N120H2,
IKW03N120H2
IKB03N120H2
Power Semiconductors
14
Rev. 2, Mar-04
Figure A. Definition of switching times
I
r r m
90%
I
r r m
10%
I
r r m
di
/dt
r r
di /dt
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
Q =Q
Q
S
F
+
t =t
t
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
τ
1
r
1
τ
2
r
2
n
n
τ
r
T
C
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance L
σ
= 180nH,
Stray capacitor C
σ
= 40pF,
Relief capacitor C
r
= 4nF (only for
ZVT switching)
Figure B. Definition of switching losses
V
DC
DUT
(Diode)
L
σ
R
G
DUT
(IGBT)
L
L
σ
C
σ
C
r
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相關代理商/技術參數(shù)
參數(shù)描述
IKW03N120H2FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 9.6A 62.5W TO247-3
IKW03N120H2XK 制造商:Infineon Technologies 功能描述:Trans IGBT Chip N-CH 1.2KV 9.6A 3-Pin(3+Tab) TO-247
IKW08T120 功能描述:IGBT 晶體管 LOW LOSS DuoPack 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IKW08T120_08 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Low Loss DuoPack : IGBT in TrenchStop? and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
IKW08T120FKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1200V 16A 70W TO247-3
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